Datasheet

PBHV9115T_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 9 January 2009 5 of 12
NXP Semiconductors
PBHV9115T
150 V, 1 A PNP high-voltage low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 µs; δ≤0.02.
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= −120 V; I
E
=0A - - −100 nA
V
CB
= −120 V; I
E
=0A;
T
j
= 150 °C
--−10 µA
I
CES
collector-emitter
cut-off current
V
CE
= −120 V; V
BE
=0A - - −100 nA
I
EBO
emitter-base cut-off
current
V
EB
= −4 V; I
C
=0A - - −100 nA
h
FE
DC current gain V
CE
= −10 V
I
C
= −50 mA 100 220 -
I
C
= −100 mA 100 220 -
I
C
= −1A
[1]
10 30 -
V
CEsat
collector-emitter
saturation voltage
I
C
= −100 mA; I
B
= −10 mA - −60 −120 mV
I
C
= −100 mA; I
B
= −20 mA - −50 −100 mV
I
C
= −500 mA;
I
B
= −100 mA
- −150 −300 mV
V
BEsat
base-emitter
saturation voltage
I
C
= −1 A; I
B
= −200 mA
[1]
- −1.05 −1.2 V
f
T
transition frequency V
CE
= −10 V; I
E
= −10 mA;
f = 100 MHz
- 115 - MHz
C
c
collector capacitance V
CB
= −20 V; I
E
=i
e
=0A;
f=1MHz
-10-pF
C
e
emitter capacitance V
EB
= −0.5 V; I
C
=i
c
=0A;
f=1MHz
- 150 - pF
t
d
delay time V
CC
= −6 V; I
C
= −0.5 A;
I
Bon
= −0.1 A; I
Boff
= 0.1 A
-8-ns
t
r
rise time - 282 - ns
t
on
turn-on time - 290 - ns
t
s
storage time - 430 - ns
t
f
fall time - 300 - ns
t
off
turn-off time - 730 - ns