Datasheet

PBHV9050T_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 16 September 2009 5 of 12
NXP Semiconductors
PBHV9050T
500 V, 150 mA PNP high-voltage low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 µs; δ≤0.02.
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= −360 V;
I
E
=0A
--−100 nA
V
CB
= −360 V;
I
E
= 0 A; T
j
= 150 °C
--−10 µA
I
CES
collector-emitter cut-off
current
V
CE
= −360 V;
V
BE
=0V
--−100 nA
I
EBO
emitter-base cut-off
current
V
EB
= −5 V; I
C
=0A - - −100 nA
h
FE
DC current gain V
CE
= −10 V
I
C
= −10 mA 100 160 300
I
C
= −50 mA
[1]
80 160 300
V
CEsat
collector-emitter
saturation voltage
I
C
= −20 mA;
I
B
= −2mA
- −115 −200 mV
I
C
= −50 mA;
I
B
= −10 mA
- −95 −200 mV
V
BEsat
base-emitter saturation
voltage
I
C
= −50 mA;
I
B
= −10 mA
[1]
- −0.75 −0.9 V
f
T
transition frequency V
CE
= −10 V;
I
E
= −10 mA;
f = 100 MHz
- 50 - MHz
C
c
collector capacitance V
CB
= −20 V;
I
E
=i
e
=0A;
f=1MHz
-6-pF
C
e
emitter capacitance V
EB
= −0.5 V;
I
C
=i
c
=0A;
f=1MHz
- 170 - pF
t
d
delay time V
CC
= −20 V;
I
C
= −0.05 A;
I
Bon
= −5 mA;
I
Boff
=10mA
-75-ns
t
r
rise time - 1600 - ns
t
on
turn-on time - 1675 - ns
t
s
storage time - 1200 - ns
t
f
fall time - 550 - ns
t
off
turn-off time - 1750 - ns