Datasheet

PBHV8140Z_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 11 December 2009 3 of 12
NXP Semiconductors
PBHV8140Z
500 V, 1 A NPN high-voltage low V
CEsat
(BISS) transistor
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm
2
.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 500 V
V
CEO
collector-emitter voltage open base - 400 V
V
CESM
collector-emitter peak
voltage
V
BE
=0V - 500 V
V
EBO
emitter-base voltage open collector - 6 V
I
C
collector current - 1 A
I
CM
peak collector current single pulse;
t
p
1ms
-2A
I
BM
peak base current single pulse;
t
p
1ms
-400mA
P
tot
total power dissipation T
amb
25 °C
[1]
-0.73W
[2]
-1.45W
T
j
junction temperature - 150 °C
T
amb
ambient temperature 55 +150 °C
T
stg
storage temperature 65 +150 °C
(1) FR4 PCB, mounting pad for collector 6 cm
2
(2) FR4 PCB, standard footprint
Fig 1. Power derating curves
T
amb
(°C)
75 17512525 7525
006aab764
1.0
0.5
1.5
2.0
P
tot
(W)
0.0
(2)
(1)