Datasheet

1. Product profile
1.1 General description
NPN high-voltage low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a medium
power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV9540Z.
1.2 Features
High voltage
Low collector-emitter saturation voltage V
CEsat
High collector current capability I
C
and I
CM
High collector current gain (h
FE
) at high I
C
AEC-Q101 qualified
Medium power SMD plastic package
1.3 Applications
LED driver for LED chain module
LCD backlighting
Automotive motor management
Switch Mode Power Supply (SMPS)
1.4 Quick reference data
[1] Pulse test: t
p
300 μs; δ≤0.02.
PBHV8140Z
500 V, 1 A NPN high-voltage low V
CEsat
(BISS) transistor
Rev. 01 — 11 December 2009 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CESM
collector-emitter peak
voltage
V
BE
= 0 V - - 500 V
V
CEO
collector-emitter voltage open base - - 400 V
I
C
collector current - - 1 A
h
FE
DC current gain V
CE
=10V;
I
C
=50mA
[1]
100 155 -

Summary of content (12 pages)