Datasheet

PBHV8118T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 7 May 2010 5 of 13
NXP Semiconductors
PBHV8118T
180 V, 1 A NPN high-voltage low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
=144V; I
E
= 0 A - - 100 nA
V
CB
=144V; I
E
=0A;
T
j
= 150 °C
--10μA
I
CES
collector-emitter cut-off
current
V
CE
=144V; V
BE
= 0 V - - 100 nA
I
EBO
emitter-base cut-off
current
V
EB
=4V; I
C
= 0 A - - 100 nA
h
FE
DC current gain V
CE
=10V
[1]
I
C
= 50 mA 100 250 -
I
C
= 100 mA 100 250 -
I
C
= 0.5 A 50 100 -
V
CEsat
collector-emitter
saturation voltage
I
C
= 100 mA; I
B
=10mA
[1]
- 4060mV
I
C
= 100 mA; I
B
=20mA
[1]
- 3350mV
V
BEsat
base-emitter saturation
voltage
I
C
= 0.5 A; I
B
=100mA
[1]
-11.2V
t
d
delay time V
CC
=6V; I
C
=0.5A;
I
Bon
= 0.1 A; I
Boff
= −0.1 A
-7-ns
t
r
rise time - 565 - ns
t
on
turn-on time - 572 - ns
t
s
storage time - 1320 - ns
t
f
fall time - 740 - ns
t
off
turn-off time - 2060 - ns
f
T
transition frequency V
CE
=10V; I
C
=10mA;
f = 100 MHz
-30-MHz
C
c
collector capacitance V
CB
=20V; I
E
=i
e
=0A;
f=1MHz
-5.7-pF
C
e
emitter capacitance V
EB
=0.5V; I
C
=i
c
=0A;
f=1MHz
- 150 - pF