Datasheet

PBHV8118T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 7 May 2010 2 of 13
NXP Semiconductors
PBHV8118T
180 V, 1 A NPN high-voltage low V
CEsat
(BISS) transistor
2. Pinning information
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1base
2emitter
3 collector
12
3
sym02
1
3
2
1
Table 3. Ordering information
Type number Package
Name Description Version
PBHV8118T - plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codes
Type number Marking code
[1]
PBHV8118T LZ*