Datasheet

PBHV8115T_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 9 December 2008 5 of 12
NXP Semiconductors
PBHV8115T
150 V, 1 A NPN high-voltage low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 µs; δ≤0.02.
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= 120 V; I
E
= 0 A - - 100 nA
V
CB
= 120 V; I
E
=0A;
T
j
= 150 °C
--10µA
I
CES
collector-emitter cut-off
current
V
CE
= 120 V; V
BE
= 0 V - - 100 nA
I
EBO
emitter-base cut-off
current
V
EB
=4V; I
C
= 0 A - - 100 nA
h
FE
DC current gain V
CE
=10V
I
C
= 50 mA 100 250 -
I
C
= 100 mA 100 250 -
I
C
= 0.5 A
[1]
50 160 -
I
C
=1A
[1]
10 30 -
V
CEsat
collector-emitter
saturation voltage
I
C
= 100 mA; I
B
= 10 mA - 40 60 mV
I
C
= 100 mA; I
B
= 20 mA - 33 50 mV
I
C
= 1 A; I
B
= 200 mA
[1]
- 225 350 mV
V
BEsat
base-emitter saturation
voltage
I
C
= 1 A; I
B
= 200 mA
[1]
- 1.1 1.2 V
f
T
transition frequency V
CE
=10V; I
E
=10mA;
f = 100 MHz
- 30 - MHz
C
c
collector capacitance V
CB
=20V; I
E
=i
e
=0A;
f=1MHz
- 5.7 - pF
C
e
emitter capacitance V
EB
= 0.5 V; I
C
=i
c
=0A;
f=1MHz
- 150 - pF
t
d
delay time V
CC
=6V; I
C
= 0.5 A;
I
Bon
= 0.1 A; I
Boff
= −0.1 A
-7-ns
t
r
rise time - 565 - ns
t
on
turn-on time - 572 - ns
t
s
storage time - 1530 - ns
t
f
fall time - 700 - ns
t
off
turn-off time - 2230 - ns