Datasheet

PBHV8115T_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 9 December 2008 4 of 12
NXP Semiconductors
PBHV8115T
150 V, 1 A NPN high-voltage low V
CEsat
(BISS) transistor
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 417 K/W
R
th(j-sp)
thermal resistance from
junction to solder point
--70K/W
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab151
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0