Datasheet

P82B96_8 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 08 — 10 November 2009 6 of 32
NXP Semiconductors
P82B96
Dual bidirectional bus buffer
9. Characteristics
Table 5. Characteristics
T
amb
= +25 ° C; voltages are specified with respect to GND with V
CC
= 5 V, unless otherwise specified.
Symbol Parameter Conditions T
amb
= +25 °C T
amb
= −40 °C to
+125 °C
[1]
Unit
Min Typ Max Min Max
Power supply
V
CC
supply voltage operating 2.0 - 15 2.0 15 V
I
CC
supply current buses HIGH - 0.9 1.8 - 3 mA
V
CC
=15V;
buses HIGH
- 1.1 2.5 - 4 mA
∆I
CC
additional quiescent
supply current
per Tx or Ty LOW - 1.7 3.5 - 3.5 mA
Bus pull-up (load) voltages and currents
V
Sx
, V
Sy
maximum input/output
voltage
open-collector;
I
2
C-bus and V
Rx
,V
Ry
=
HIGH
--15-15V
I
Sx
, I
Sy
static output loading on
I
2
C-bus
V
Sx
, V
Sy
= 1.0 V;
V
Rx
,V
Ry
=LOW
[2]
0.2 - 3 0.2 3 mA
I
Sx
, I
Sy
dynamic output sink
capability on I
2
C-bus
V
Sx
, V
Sy
=2V;
V
Rx
,V
Ry
=LOW
718- 7 -mA
I
Sx
, I
Sy
leakage current on
I
2
C-bus
V
Sx
, V
Sy
=5V;
V
Rx
,V
Ry
= HIGH
--1 -10µA
V
Sx
, V
Sy
=15V;
V
Rx
,V
Ry
= HIGH
-1- - 10µA
V
Tx
, V
Ty
maximum output voltage
level
open-collector - - 15 - 15 V
I
Tx
, I
Ty
static output loading on
buffered bus
V
Tx
, V
Ty
= 0.4 V;
V
Sx
,V
Sy
= LOW on
I
2
C-bus = 0.4 V
- - 30 - 30 mA
I
Tx
, I
Ty
dynamic output sink
capability, buffered bus
V
Tx
, V
Ty
>1V;
V
Sx
,V
Sy
= LOW on
I
2
C-bus = 0.4 V
60 100 - 60 - mA
I
Tx
, I
Ty
leakage current on
buffered bus
V
Tx
, V
Ty
=V
CC
=15V;
V
Sx
, V
Sy
= HIGH
-1- - 10µA
Input currents
I
Sx
, I
Sy
input current from
I
2
C-bus
bus LOW;
V
Rx
,V
Ry
= HIGH
- −1- - −10 µA
I
Rx
, I
Ry
input current from
buffered bus
bus LOW;
V
Rx
,V
Ry
= 0.4 V
- −1- - −10 µA
I
Rx
, I
Ry
leakage current on
buffered bus input
V
Rx
, V
Ry
=V
CC
-1- - 10µA
Output logic LOW level
V
Sx
, V
Sy
output logic level LOW
on normal I
2
C-bus
I
Sx
, I
Sy
=3mA
[3]
0.8 0.88 1.0 (see Figure 6)V
I
Sx
, I
Sy
= 0.2 mA
[3]
670 730 790 (see Figure 5)mV
dV
Sx
/dT,
dV
Sy
/dT
temperature coefficient
of output LOW levels
I
Sx
, I
Sy
= 0.2 mA
[3]
- −1.8 - - - mV/K