Datasheet

NX3L2T66 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 7 — 8 February 2013 7 of 21
NXP Semiconductors
NX3L2T66
Dual low-ohmic single-pole single-throw analog switch
[1] Typical values are measured at T
amb
= 25 C.
[2] Measured at identical V
CC
, temperature and input voltage.
[3] Flatness is defined as the difference between the maximum and minimum value of ON resistance measured at identical V
CC
and
temperature.
11.3 ON resistance test circuit and graphs
R
ON(flat)
ON resistance (flatness) V
I
=GNDtoV
CC
;
I
SW
= 100 mA
[3]
V
CC
= 1.4 V - 1.0 3.3 - 3.6 
V
CC
= 1.65 V - 0.5 1.2 - 1.3 
V
CC
= 2.3 V - 0.15 0.3 - 0.35 
V
CC
= 2.7 V - 0.13 0.3 - 0.35 
V
CC
= 4.3 V - 0.2 0.4 - 0.45 
Table 8. ON resistance …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Figure 9 to Figure 15.
Symbol Parameter Conditions T
amb
= 40 C to +85
C
T
amb
= 40 C to
+125 C
Unit
Min Typ
[1]
Max Min Max
R
ON
=V
SW
/ I
SW
.(1)V
CC
=1.5V.
(2) V
CC
=1.8V.
(3) V
CC
=2.5V.
(4) V
CC
=2.7V.
(5) V
CC
=3.3V.
(6) V
CC
=4.3V.
Measured at T
amb
=25C.
Fig 8. Test circuit for measuring ON resistance Fig 9. Typical ON resistance as a function of input
voltage
001aaj223
V
I
V
IH
V
CC
GND
nYnZ
nE
V
SW
I
SW
V
I
(V)
054312
001aag564
0.8
0.4
1.2
1.6
R
ON
(Ω)
0
(1)
(2)
(5)
(6)
(4)
(3)