Datasheet

NX3L2T66 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 7 — 8 February 2013 6 of 21
NXP Semiconductors
NX3L2T66
Dual low-ohmic single-pole single-throw analog switch
11.1 Test circuits
11.2 ON resistance
V
I
=0.3VorV
CC
 0.3 V; V
O
=V
CC
 0.3 V or 0.3 V. V
I
=0.3VorV
CC
 0.3 V; V
O
= open circuit.
Fig 6. Test circuit for measuring OFF-state leakage
current
Fig 7. Test circuit for measuring ON-state leakage
current
001aaj221
I
S
V
I
V
IL
V
O
V
CC
GND
nYnZ
nE
001aaj222
I
S
V
I
V
IH
V
O
V
CC
GND
nYnZ
nE
Table 8. ON resistance
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Figure 9 to Figure 15.
Symbol Parameter Conditions T
amb
= 40 C to +85
C
T
amb
= 40 C to
+125 C
Unit
Min Typ
[1]
Max Min Max
R
ON(peak)
ON resistance (peak) V
I
=GNDtoV
CC
;
I
SW
= 100 mA;
see Figure 8
V
CC
= 1.4 V - 1.6 3.7 - 4.1 
V
CC
= 1.65 V - 1.0 1.6 - 1.7 
V
CC
= 2.3 V - 0.55 0.8 - 0.9 
V
CC
=2.7V - 0.5 0.75 - 0.9 
V
CC
=4.3V - 0.5 0.75 - 0.9 
R
ON
ON resistance mismatch
between channels
V
I
=GNDtoV
CC
;
I
SW
= 100 mA
[2]
V
CC
= 1.4 V - 0.04 0.3 - 0.3 
V
CC
= 1.65 V - 0.04 0.2 - 0.3 
V
CC
= 2.3 V - 0.02 0.08 - 0.1 
V
CC
= 2.7 V - 0.02 0.075 - 0.1 
V
CC
= 4.3 V - 0.02 0.075 - 0.1 