Datasheet

NX3L1G384 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 6 — 3 July 2012 5 of 18
NXP Semiconductors
NX3L1G384
Low-ohmic single-pole single-throw analog switch
11.1 Test circuits
11.2 ON resistance
C
I
input
capacitance
-1.0----pF
C
S(OFF)
OFF-state
capacitance
-35----pF
C
S(ON)
ON-state
capacitance
-110----pF
Table 7. Static characteristics
…continued
At recommended operating conditions; voltages are referenced to GND (ground 0 V).
Symbol Parameter Conditions T
amb
= 25 C T
amb
= 40 C to +125 C Unit
Min Typ Max Min Max
(85 C)
Max
(125 C)
V
I
=0.3VorV
CC
 0.3 V; V
O
=V
CC
 0.3 V or 0.3 V. V
I
=0.3VorV
CC
 0.3 V; V
O
= open circuit.
Fig 5. Test circuit for measuring OFF-state leakage
current
Fig 6. Test circuit for measuring ON-state leakage
current
001aag479
I
S
V
I
V
IH
V
O
V
CC
GND
YZ
E
001aag480
I
S
V
I
V
IL
V
O
V
CC
GND
YZ
E
Table 8. ON resistance
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Figure 8
to Figure 14.
Symbol Parameter Conditions T
amb
= 40 C to +85 C T
amb
= 40 C to +125 C Unit
Min Typ
[1]
Max Min Max
R
ON(peak)
ON resistance
(peak)
V
I
=GNDtoV
CC
;
I
SW
= 100 mA; see Figure 7
V
CC
= 1.4 V - 1.6 3.7 - 4.1 
V
CC
= 1.65 V - 1.0 1.6 - 1.7 
V
CC
= 2.3 V - 0.55 0.8 - 0.9 
V
CC
= 2.7 V - 0.5 0.75 - 0.9 
V
CC
= 4.3 V - 0.5 0.75 - 0.9 