Datasheet

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1. General description

The NX3L1G3157 is a low-ohmic single-pole double-throw analog switch suitable for use

as an analog or digital 2:1 multiplexer/demultiplexer. It has a digital select input (S), two

independent inputs/outputs (Y0 and Y1) and a common input/output (Z). Schmitt trigger

action at the digital input makes the circuit tolerant to slower input rise and fall times.

The NX3L1G3157 allows signals with amplitude up to V

to be transmitted from Z to Y0

or Y1; or from Y0 or Y1 to Z. Its low ON resistance (0.5 ) and flatness (0.13 ) ensures

minimal attenuation and distortion of transmitted signals.

2. Features and benefits

 Wide supply voltage range from 1.4 V to 4.3 V

 Very low ON resistance:

 1.6  (typical) at V

=1.4V

 1.0  (typical) at V

=1.65V

 0.55  (typical) at V

=2.3V

 0.50  (typical) at V

=2.7V

 0.50  (typical) at V

=4.3V

 Break-before-make switching

 High noise immunity

 ESD protection:

 HBM JESD22-A114F Class 3A exceeds 7500 V

 MM JESD22-A115-A exceeds 200 V

 CDM AEC-Q100-011 revision B exceeds 1000 V

 IEC61000-4-2 contact discharge exceeds 8000 V for switch ports

 CMOS low-power consumption

 Latch-up performance exceeds 100 mA per JESD78 Class II Level A

 Direct interface with TTL levels at 3.0 V

 Control input accepts voltages above supply voltage

 High current handling capability (350 mA continuous current under 3.3 V supply)

 Specified from 40 C to +85 C and from 40 C to +125 C

NX3L1G3157

Low-ohmic single-pole double-throw analog switch

Rev. 10 — 7 August 2012 Product data sheet

Summary of content (22 pages)

PAGE 1
NX3L1G3157 Low-ohmic single-pole double-throw analog switch Rev. 10 — 7 August 2012 Product data sheet 1. General description The NX3L1G3157 is a low-ohmic single-pole double-throw analog switch suitable for use as an analog or digital 2:1 multiplexer/demultiplexer. It has a digital select input (S), two independent inputs/outputs (Y0 and Y1) and a common input/output (Z). Schmitt trigger action at the digital input makes the circuit tolerant to slower input rise and fall times.
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NX3L1G3157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch 3. Applications  Cell phone  PDA  Portable media player 4. Ordering information Table 1. Ordering information Type number Package Temperature range Name Description Version NX3L1G3157GW 40 C to +125 C SC-88 plastic surface-mounted package; 6 leads SOT363 NX3L1G3157GM 40 C to +125 C XSON6 plastic extremely thin small outline package; no leads; 6 terminals; body 1  1.45  0.5 mm SOT886 5.
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NX3L1G3157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch 7. Pinning information 7.1 Pinning NX3L1G3157 NX3L1G3157 Y1 1 6 Y1 1 6 S GND 2 5 VCC Y0 3 4 Z S GND 2 5 VCC Y0 3 4 Z 001aag562 Transparent top view 001aai592 Fig 3. Pin configuration SOT363 (SC-88) Fig 4. Pin configuration SOT886 (XSON6) 7.2 Pin description Table 3.
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NX3L1G3157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch 9. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter VCC supply voltage Conditions select input S Min Max Unit 0.5 +4.6 V [1] 0.5 +4.6 V [2] 0.5 VCC + 0.5 V VI input voltage VSW switch voltage IIK input clamping current VI < 0.
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NX3L1G3157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch 11. Static characteristics Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground 0 V). Symbol Parameter VIH VIL HIGH-level input voltage LOW-level input voltage Tamb = 25 C Conditions Tamb = 40 C to +125 C Unit Min Typ Max Min Max Max (85 C) (125 C) VCC = 1.4 V to 1.95 V 0.65VCC - - 0.65VCC - - V VCC = 2.3 V to 2.7 V 1.7 - - 1.
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NX3L1G3157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch 11.1 Test circuits VCC VIL or VIH S Y0 1 Z Y1 2 switch switch S 1 VIH 2 VIL IS VI VO GND 001aac358 VI = 0.3 V or VCC  0.3 V; VO = VCC  0.3 V or 0.3 V. Fig 5. Test circuit for measuring OFF-state leakage current VCC VIL or VIH IS S Y0 1 Z Y1 2 switch S 1 VIH 2 VIL switch VI VO GND 001aac359 VI = 0.3 V or VCC  0.3 V; VO = VCC  0.3 V or 0.3 V. Fig 6.
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NX3L1G3157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch 11.2 ON resistance Table 8. ON resistance At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Figure 8 to Figure 14. Symbol RON(peak) Parameter ON resistance (peak) Tamb = 40 C to +85 C Tamb = 40 C to +125 C Unit Conditions ON resistance (flatness) Min Max - 1.6 3.7 - 4.1  - 1.0 1.6 - 1.7  VCC = 2.3 V - 0.55 0.8 - 0.9  VCC = 2.7 V - 0.5 0.
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NX3L1G3157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch 11.3 ON resistance test circuit and graphs 001aag564 1.6 RON (Ω) 1.2 (1) VSW V VCC S VIL or VIH Z Y0 1 switch Y1 2 VI 0.8 switch S 1 VIL 2 VIH (2) (3) (4) 0.4 (5) (6) ISW 0 GND 0 1 2 RON = VSW / ISW. 3 4 5 VI (V) 001aag563 (1) VCC = 1.5 V. (2) VCC = 1.8 V. (3) VCC = 2.5 V. (4) VCC = 2.7 V. (5) VCC = 3.3 V. (6) VCC = 4.3 V. Measured at Tamb = 25 C. Fig 7.
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NX3L1G3157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch 001aag565 1.6 001aag566 1.0 RON (Ω) RON (Ω) 0.8 1.2 (1) (2) (3) (4) 0.6 (1) (2) (3) (4) 0.8 0.4 0.4 0.2 0 0 0 1 2 3 0 1 2 VI (V) (1) Tamb = 125 C. (1) Tamb = 125 C. (2) Tamb = 85 C. (2) Tamb = 85 C. (3) Tamb = 25 C. (3) Tamb = 25 C. (4) Tamb = 40 C. (4) Tamb = 40 C. Fig 9. ON resistance as a function of input voltage; VCC = 1.5 V 001aag567 1.0 3 VI (V) RON (Ω) Fig 10.
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NX3L1G3157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch 001aag569 1.0 001aaj896 1.0 RON (Ω) RON (Ω) 0.8 0.8 0.6 0.6 (1) (2) (3) (4) 0.4 (1) (2) (3) (4) 0.4 0.2 0.2 0 0 0 1 2 3 4 0 1 2 3 4 VI (V) 5 VI (V) (1) Tamb = 125 C. (1) Tamb = 125 C. (2) Tamb = 85 C. (2) Tamb = 85 C. (3) Tamb = 25 C. (3) Tamb = 25 C. (4) Tamb = 40 C. (4) Tamb = 40 C. Fig 13. ON resistance as a function of input voltage; VCC = 3.3 V Fig 14.
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NX3L1G3157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch Table 9. Dynamic characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for load circuit see Figure 17. Symbol Parameter tb-m Tamb = 25 C Conditions Tamb = 40 C to +125 C Unit Min Typ[1] Max Min Max (85 C) Max (125 C) - 19 - 4 - - ns VCC = 1.65 V to 1.95 V - 17 - 4 - - ns VCC = 2.3 V to 2.7 V - 13 - 2 - - ns VCC = 2.7 V to 3.
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NX3L1G3157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch VCC S Y0 Z G VI V VO RL Y1 VEXT = 1.5 V CL GND 001aag571 a. Test circuit VI 0.5VI 0.9VO 0.9VO VO tb-m 001aag572 b. Input and output measurement points Fig 16. Test circuit for measuring break-before-make timing VCC G VI V VO RL S Y0 1 Z Y1 2 switch VEXT = 1.5 V CL GND 001aag642 Test data is given in Table 11. Definitions test circuit: RL = Load resistance.
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NX3L1G3157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch 12.2 Additional dynamic characteristics Table 12. Additional dynamic characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V); VI = GND or VCC (unless otherwise specified); tr = tf  2.5 ns; Tamb = 25 C. Symbol Parameter Conditions THD fi = 20 Hz to 20 kHz; RL = 32 ; see Figure 18 f(3dB) iso total harmonic distortion Min 0.15 - % VCC = 1.65 V; VI = 1.2 V (p-p) - 0.
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NX3L1G3157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch VCC 0.5VCC RL S VIL or VIH Y0 1 switch Y1 2 Z fi switch S 1 VIL 2 VIH dB GND 001aag574 Adjust fi voltage to obtain 0 dBm level at output. Increase fi frequency until dB meter reads 3 dB. Fig 19. Test circuit for measuring the frequency response when channel is in ON-state 0.5VCC VCC 0.
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NX3L1G3157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch VCC VI G logic input S Y0 1 Z Y1 2 switch S 1 VIL 2 VIH switch RL RL 0.5VCC 0.5VCC CL V VO 001aah442 a. Test circuit logic input (S) off on off Vct VO 001aah443 b. Input and output pulse definitions Fig 21. Test circuit for measuring crosstalk voltage between digital inputs and switch NX3L1G3157 Product data sheet All information provided in this document is subject to legal disclaimers.
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NX3L1G3157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch VCC S Y0 1 Z Y1 2 switch Rgen VI G VO RL CL Vgen GND 001aac366 a. Test circuit logic (S) off input on VO off ΔVO 001aac478 b. Input and output pulse definitions Definition: Qinj = VO  CL. VO = output voltage variation. Rgen = generator resistance. Vgen = generator voltage. Fig 22.
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NX3L1G3157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch 13. Package outline Plastic surface-mounted package; 6 leads SOT363 D E B y X A HE 6 5 v M A 4 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.
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NX3L1G3157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch SOT886 XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm b 1 2 3 4x (2) L L1 e 6 5 e1 4 e1 6x A (2) A1 D E terminal 1 index area 0 1 2 mm scale Dimensions (mm are the original dimensions) Unit mm max nom min A(1) 0.5 A1 b D E 0.04 0.25 1.50 1.05 0.20 1.45 1.00 0.17 1.40 0.95 e e1 0.6 0.5 L L1 0.35 0.40 0.30 0.35 0.27 0.32 Notes 1.
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NX3L1G3157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch 14. Abbreviations Table 13. Abbreviations Acronym Description CDM Charged Device Model CMOS Complementary Metal-Oxide Semiconductor ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model PDA Personal Digital Assistant TTL Transistor-Transistor Logic 15. Revision history Table 14. Revision history Document ID Release date Data sheet status Change notice Supersedes NX3L1G3157 v.
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NX3L1G3157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch 16. Legal information 16.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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NX3L1G3157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use.
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NX3L1G3157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch 18. Contents 1 2 3 4 5 6 7 7.1 7.2 8 9 10 11 11.1 11.2 11.3 12 12.1 12.2 12.3 13 14 15 16 16.1 16.2 16.3 16.4 17 18 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . .