Datasheet

NX3DV42 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 3 — 13 February 2013 5 of 19
NXP Semiconductors
NX3DV42
Dual high-speed USB 2.0 double-pole double-throw analog switch
[1] Typical values are measured at T
amb
= 25 C and V
CC
= 3.3 V.
11.1 Test circuit and graphs
I
S(OFF)
OFF-state
leakage
current
V
CC
= 4.3 V; see Figure 4 and
Figure 7
--1- 2 A
I
OFF
power-off
leakage
current
V
I
or V
O
=0Vto4.3V;
V
CC
= 0 V; see Figure 8
--1- 10 A
I
CC
supply current V
I
=V
CC
or GND; V
CC
=4.3V;
V
SW
=GNDorV
CC
; see
Figure 6
--1 - 10A
I
CC
additional
supply current
V
I
=2.6 V; V
CC
=4.3V;
V
SW
=GNDorV
CC
--10 - 10A
V
I
=1.8 V; V
CC
=4.3V;
V
SW
=GNDorV
CC
--15 - 15A
C
I
input
capacitance
pins S and OE - 1.0 - - - pF
C
S(OFF)
OFF-state
capacitance
pins HSDn+ and HSDn
V
CC
= 3.3 V; V
I
=0Vto3.3 V
-2.8- - -pF
C
S(ON)
ON-state
capacitance
pins D+ and DV
CC
= 3.3 V;
V
I
= 0 V to 3.3 V
-7.3- - -pF
Table 7. Static characteristics
…continued
At recommended operating conditions; voltages are referenced to GND (ground 0 V).
Symbol Parameter Conditions T
amb
= 40 C to +85 C T
amb
= 40 C to +125 C Unit
Min Typ
[1]
Max Min Max
V
I
= V
CC
or GND and V
O
= GND or V
CC
.
Test circuit also applies for D+, HSD1+ and HSD2+.
Fig 4. Test circuit for measuring OFF-state leakage current
I
S
aaa-001365
2
1
HSD2-
V
IL
or V
IH
V
IH
HSD1-
S
D- switch
V
I
V
O
GND
OE
V
CC
V
IL
V
IH
1
2
Sswitch