Datasheet

NX3DV221 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 19 June 2013 5 of 19
NXP Semiconductors
NX3DV221
High-speed USB 2.0 switch with enable
11.1 Test circuits
I
OFF
power-off
leakage current
per pin; V
CC
=0V
V
SW
= 0 V to 2.7 V - 0.01 - - 2.0 A
V
SW
= 0 V to 3.6 V - 0.01 - - 2.0 A
V
SW
=0Vto5.25V - 0.01 - - 3.0 A
I
S(OFF)
OFF-state
leakage current
nD+ and nD- ports;
see Figure 4
V
CC
= 2.7 V, 3.6 V - - - - 1 A
I
CC
supply current V
CC
= 2.7 V, 3.6 V
OE
=GND - 18.5 - - 30 A
OE
=V
CC
(low-power
mode)
-0.01- - 2 A
I
CC
additional
supply current
S, OE input;
one input at 1.8 V;
other inputs at GND or V
CC
V
CC
= 2.7 V - 0.8 - - 1.8 A
V
CC
= 3.6 V - 12.5 - - 20 A
C
I
input
capacitance
V
SW
= GND or V
CC
;
V
CC
= 2.5 V, 3.3 V
-1- - 2.5pF
C
S(OFF)
OFF-state
capacitance
V
SW
= GND or V
CC
;
V
CC
= 2.5 V, 3.3 V
-3- - 5.0pF
C
S(ON)
ON-state
capacitance
V
SW
= GND or V
CC
;
V
CC
= 2.5 V, 3.3 V
-6- - 7.5pF
Table 7. Static characteristics
…continued
At recommended operating conditions; voltages are referenced to GND (ground 0 V).
Symbol Parameter Conditions T
amb
= 25 C T
amb
=-40 C to +85 C Unit
Min Typ Max Min Max
V
I
=0V; V
O
= 0 V to 5.25 V
Fig 4. Test circuit for measuring OFF-state leakage current
I
S
001aao080
2
1
2Dn
V
IL
or V
IH
V
IH
1Dn
S
Dn switch
V
I
V
O
GND
OE
V
CC
V
IL
V
IH
V
IH
V
IH
1
2
Sswitch OE