Datasheet

MPXV5004G
Sensors
4 Freescale Semiconductor
Pressure
Maximum Ratings
Figure 1 shows a block diagram of the internal circuitry integrated on a pressure sensor chip.
Figure 1. Integrated Pressure Sensor Schematic
On-chip Temperature Compensation and Calibration
The performance over temperature is achieved by
integrating the shear-stress strain gauge, temperature
compensation, calibration and signal conditioning circuitry
onto a single monolithic chip.
Figure 2 illustrates the gauge configuration in the basic
chip carrier (Case 482). A fluorosilicone gel isolates the die
surface and wire bonds from the environment, while allowing
the pressure signal to be transmitted to the silicon diaphragm.
The MPxx5004G series sensor operating characteristics
are based on use of dry air as pressure media. Media, other
than dry air, may have adverse effects on sensor
performance and long-term reliability. Internal reliability and
qualification test for dry air, and other media, are available
from the factory. Contact the factory for information regarding
media tolerance in your application.
Figure 3 shows the recommended decoupling circuit for
interfacing the output of the MPxx5004G to the A/D input of
the microprocessor or microcontroller. Proper decoupling of
the power supply is recommended.
Typical, minimum and maximum output curves are shown
for operation over a temperature range of 10°C to 60°C using
the decoupling circuit shown in Figure 3. The output will
saturate outside of the specified pressure range.
Figure 2. Cross-Sectional Diagram (Not to Scale)
Table 2. Maximum Ratings
(1)
1. Exposure beyond the specified limits may cause permanent damage or degradation to the device.
Rating Symbol Value Unit
Maximum Pressure (P1 > P2)
P
MAX
16 kPa
Storage Temperature
T
STG
–30 to +100 °C
Operating Temperature
T
A
0 to +85 °C
V
OUT
V
S
Sensing
Element
GND
Thin Film
Temperature
Compensation
and Calibration
Circuitry
Gain Stage #2
and
Ground
Reference
Shift Circuitry
Pins 1, 5, 6, 7, and 8 are NO CONNECTS
for small outline package device.
2
4
3
Fluorosilicone
Gel Die Coat
Wire Bond
Die
P1
Stainless
Steel Cap
Thermoplastic
Case
Die Bond
Differential Sensing Element
P2
Lead Frame