Datasheet

MPC8250 Hardware Specifications, Rev. 2
Freescale Semiconductor 7
Electrical and Thermal Characteristics
NOTE: Core, PLL, and I/O Supply Voltages
VDDH, VCCSYN, and VDD must track each other and both must vary in
the same direction—in the positive direction (+5% and +0.1 Vdc) or in the
negative direction (-5% and -0.1 Vdc).
This device contains circuitry protecting against damage due to high static voltage or electrical fields;
however, it is advised that normal precautions be taken to avoid application of any voltages higher than
maximum-rated voltages to this high-impedance circuit. Reliability of operation is enhanced if unused
inputs are tied to an appropriate logic voltage level (either GND or V
CC
).
Figure 2 shows the undershoot and overshoot voltage of the 60x and local bus memory interface of the
MPC8280. Note that in PCI mode the I/O interface is different.
Figure 2. Overshoot/Undershoot Voltage
Table 3 shows DC electrical characteristics.
Table 3. DC Electrical Characteristics
1
Characteristic Symbol Min Max Unit
Input high voltage, all inputs except CLKIN V
IH
2.0 3.465 V
Input low voltage V
IL
GND 0.8 V
CLKIN input high voltage V
IHC
2.4 3.465 V
CLKIN input low voltage V
ILC
GND 0.4 V
Input leakage current, V
IN
= VDDH
2
I
IN
—10µA
Hi-Z (off state) leakage current, V
IN
= VDDH
2
I
OZ
—10µA
Signal low input current, V
IL
= 0.8 V I
L
—1µA
Signal high input current, V
IH
= 2.0 V I
H
—1µA
Output high voltage, I
OH
= –2 mA V
OH
2.4 — V
GND
GND – 0.3 V
GND – 1.0 V
Not to exceed 10%
GV
DD
of t
SDRAM_CLK
GV
DD
+ 5%
4 V
V
IH
V
IL