Datasheet

MPC5200B Data Sheet, Rev. 4
Freescale Semiconductor 5
1.1.3 DC Electrical Specifications
Table 3 gives the DC Electrical characteristics for the MPC5200B at recommended operating conditions (see Table 2).
Input voltage — standard I/O buffers Vin 0 VDD_IO V D2.7
Input voltage — memory I/O buffers (SDR) Vin
SDR
0 VDD_MEM_IO
SDR
VD2.8
Input voltage — memory I/O buffers (DDR) Vin
DDR
0VDD_MEM_IO
DDR
VD2.9
Ambient operating temperature range
(2)
T
A
–40 +85
o
C D2.10
Die junction operating temperature range Tj –40 +115
o
C D2.12
1
These are recommended and tested operating conditions. Proper device operation outside these conditions is not
guaranteed.
2
Maximum e300 core operating frequency is 400 MHz.
Table 3. DC Electrical Specifications
Characteristic Condition Sym Min Max Unit SpecID
Input high voltage Input type = TTL
VDD_IO/VDD_MEM_IO
SDR
V
IH
2.0 — V D3.1
Input high voltage Input type = TTL
VDD_MEM_IO
DDR
V
IH
1.7 — V D3.2
Input high voltage Input type = PCI
VDD_IO
V
IH
2.0 — V D3.3
Input high voltage Input type = SCHMITT
VDD_IO
V
IH
2.0 — V D3.4
Input high voltage SYS_XTAL_IN CV
IH
2.0 — V D3.5
Input high voltage RTC_XTAL_IN CV
IH
2.0 — V D3.6
Input low voltage Input type = TTL
VDD_IO/VDD_MEM_IO
SDR
V
IL
—0.8VD3.7
Input low voltage Input type = TTL
VDD_MEM_IO
DDR
V
IL
—0.7VD3.8
Input low voltage Input type = PCI
VDD_IO
V
IL
—0.8VD3.9
Input low voltage Input type = SCHMITT
VDD_IO
V
IL
— 0.8 V D3.10
Input low voltage SYS_XTAL_IN CV
IL
— 0.8 V D3.11
Input low voltage RTC_XTAL_IN CV
IL
— 0.8 V D3.12
Input leakage current Vin = 0 or
VDD_IO/VDD_IO_MEM
SDR
(depending on input type
(1)
)
I
IN
— ±2 μA D3.13
Input leakage current SYS_XTAL_IN
Vin = 0 or VDD_IO
I
IN
— ±10 μA D3.14
Table 2. Recommended Operating Conditions (continued)
Characteristic Sym Min
(1)
Max
(1)
Unit SpecID