Datasheet

2003 Mar 18 5
NXP Semiconductors Product data sheet
PNP switching transistor MMBT3906
handbook, halfpage
−10
3
−10
2
−10
MHC463
−10
−1
−1 −10
I
C
(mA)
V
CEsat
(mV)
−10
2
−10
3
(1)
(2)
(3)
Fig.6 Collector-emitter saturation voltage as a
function of collector current.
I
C
/I
B
= 10.
(1) T
amb
= 25 °C.
(2) T
amb
= 150 °C.
(3) T
amb
= −55 °C.
handbook, full pagewidth
R
C
R2
R1
DUT
MGD624
V
o
R
B
(probe)
450 Ω
(probe)
450 Ω
oscilloscope
oscilloscope
V
BB
V
i
V
CC
Fig.7 Test circuit for switching times.
V
i
= 5 V; T = 500 µs; t
p
= 10 µs; t
r
= t
f
≤ 3 ns.
R1 = 56 Ω; R2 = 2.5 kΩ; R
B
= 3.9 kΩ; R
C
= 270 Ω.
V
BB
= 1.9 V; V
CC
= −3 V.
Oscilloscope: input impedance Z
i
= 50 Ω.