Datasheet

2004 Feb 03 2
NXP Semiconductors Product data sheet
NPN switching transistor MMBT3904
FEATURES
• Collector current capability I
C
= 200 mA
• Collector-emitter voltage V
CEO
= 40 V.
APPLICATIONS
• General switching and amplification.
DESCRIPTION
NPN switching transistor in a SOT23 plastic package.
PNP
complement: MMBT3906.
MARKING
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = W: Made in China.
TYPE NUMBER MARKING CODE
(1)
MMBT3904 7A∗
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
21
3
MAM255
Top view
2
3
1
Fig.1 Simplified outline (SOT23) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
collector-emitter voltage 40 V
I
C
collector current (DC) 200 mA
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
NAME DESCRIPTION VERSION
MMBT3904 − plastic surface mounted package; 3 leads SOT23