Datasheet

2004 Jan 16 3
NXP Semiconductors Product data sheet
NPN switching transistor MMBT2222A
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 µs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector cut-off current I
E
= 0; V
CB
= 60 V − 10 nA
I
E
= 0; V
CB
= 60 V; T
j
= 125 °C − 10 µA
I
EBO
emitter cut-off current I
C
= 0; V
EB
= 5 V − 10 nA
h
FE
DC current gain I
C
= 0.1 mA; V
CE
= 10 V 35 −
I
C
= 1 mA; V
CE
= 10 V 50 −
I
C
= 10 mA; V
CE
= 10 V 75 −
I
C
= 10 mA; V
CE
= 10 V;
T
amb
= −55 °C
35 −
I
C
= 150 mA; V
CE
= 10 V 100 300
I
C
= 150 mA; V
CE
= 1 V 50 −
I
C
= 500 mA; V
CE
= 10 V 40 −
V
CEsat
collector-emitter saturation voltage I
C
= 150 mA; I
B
= 15 mA; note 1 − 300 mV
I
C
= 500 mA; I
B
= 50 mA; note 1 − 1 V
V
BEsat
base-emitter saturation voltage I
C
= 150 mA; I
B
= 15 mA; note 1 0.6 1.2 V
I
C
= 500 mA; I
B
= 50 mA; note 1 − 2 V
C
c
collector capacitance I
E
= i
e
= 0; V
CB
= 10 V;
f
= 1 MHz
− 8 pF
C
e
emitter capacitance I
C
= i
c
= 0; V
EB
= 500 mV;
f
= 1 MHz
− 25 pF
f
T
transition frequency I
C
= 20 mA; V
CE
= 20 V;
f
= 100 MHz
300 − MHz
F noise figure I
C
= 100 µA; V
CE
= 5 V;
R
S
= 1 kΩ; f = 1 kHz
− 4 dB
Switching times (between 10% and 90% levels); (see Fig.2)
t
on
turn-on time I
Con
= 150 mA; I
Bon
= 15 mA;
I
Boff
= −15 mA
− 35 ns
t
d
delay time − 15 ns
t
r
rise time − 20 ns
t
off
turn-off time − 250 ns
t
s
storage time − 200 ns
t
f
fall time − 60 ns