Datasheet
MCF5208 ColdFire
®
Microprocessor Data Sheet, Rev. 3
Electrical Characteristics
Freescale Semiconductor20
5.4 DC Electrical Specifications
2
A device is defined as a failure if, after exposure to ESD pulses, the device no longer
meets the device specification requirements. Complete DC parametric and functional
testing is performed per applicable device specification at room temperature followed by
hot temperature, unless specified otherwise in the device specification.
Table 7. DC Electrical Specifications
Characteristic Symbol Min Max Unit
Core Supply Voltage IV
DD
1.4 1.6 V
PLL Supply Voltage PLLV
DD
1.4 1.6 V
CMOS Pad Supply Voltage EV
DD
3.0 3.6 V
SDRAM and FlexBus Supply Voltage
Mobile DDR/Bus Pad Supply Voltage (nominal 1.8V)
DDR/Bus Pad Supply Voltage (nominal 2.5V)
SDR/Bus Pad Supply Voltage (nominal 3.3V)
SDV
DD
1.70
2.25
3.0
1.95
2.75
3.6
V
CMOS Input High Voltage EV
IH
2EV
DD
+0.3 V
CMOS Input Low Voltage EV
IL
V
SS
- 0.3 0.8 V
CMOS Output High Voltage
I
OH
= –5.0 mA
EV
OH
EV
DD
- 0.4 — V
CMOS Output Low Voltage
I
OL
= 5.0 mA
EV
OL
—0.4V
SDRAM and FlexBus Input High Voltage
Mobile DDR/Bus Input High Voltage (nominal 1.8V)
DDR/Bus Pad Supply Voltage (nominal 2.5V)
SDR/Bus Pad Supply Voltage (nominal 3.3V)
SDV
IH
1.35
1.7
2
SDV
DD
+0.3
SDV
DD
+0.3
SDV
DD
+0.3
V
SDRAM and FlexBus Input Low Voltage
Mobile DDR/Bus Input High Voltage (nominal 1.8V)
DDR/Bus Pad Supply Voltage (nominal 2.5V)
SDR/Bus Pad Supply Voltage (nominal 3.3V)
SDV
IL
V
SS
- 0.3
V
SS
- 0.3
V
SS
- 0.3
0.45
0.8
0.8
V
SDRAM and FlexBus Output High Voltage
Mobile DDR/Bus Input High Voltage (nominal 1.8V)
DDR/Bus Pad Supply Voltage (nominal 2.5V)
SDR/Bus Pad Supply Voltage (nominal 3.3V)
I
OH
= –5.0 mA for all modes
SDV
OH
SDV
DD
-0.35
2.1
2.4
—
—
—
V
SDRAM and FlexBus Output Low Voltage
Mobile DDR/Bus Input High Voltage (nominal 1.8V)
DDR/Bus Pad Supply Voltage (nominal 2.5V)
SDR/Bus Pad Supply Voltage (nominal 3.3V)
I
OL
= 5.0 mA for all modes
SDV
OL
—
—
—
0.3
0.3
0.5
V
Input Leakage Current
V
in
= IV
DD
or V
SS
, Input-only pins
I
in
–1.0 1.0 μA