Datasheet

Appendix A Electrical Characteristics
Freescale Semiconductor MC9S12C-Family / MC9S12GC-Family 671
Rev 01.24
Table A-18. NVM Timing Characteristics
Conditions are shown in Table A-4 unless otherwise noted
Num C Rating Symbol Min Typ Max Unit
1 D External Oscillator Clock f
NVMOSC
0.5 — 50
(1)
1. Restrictions for oscillator in crystal mode apply!
MHz
2 D Bus frequency for Programming or Erase Operations f
NVMBUS
1 — MHz
3 D Operating Frequency f
NVMOP
150 — 200 kHz
4 P Single Word Programming Time t
swpgm
46
(2)
2. Minimum Programming times are achieved under maximum NVM operating frequency f
NVMOP
and maximum bus frequency
f
bus
.
— 74.5
(3)
3. Maximum Erase and Programming times are achieved under particular combinations of f
NVMOP
and bus frequency f bus. Refer
to formulae in Sections A.3.1.1 - A.3.1.4 for guidance.
µs
5 D Flash Burst Programming consecutive word t
bwpgm
20.4
2
—31
3
µs
6 D Flash Burst Programming Time for 32 Word row t
brpgm
678.4
2
— 1035.5
3
µs
6 D Flash Burst Programming Time for 64 Word row t
brpgm
1331.2
2
— 2027.5
3
µs
7 P Sector Erase Time t
era
20
(4)
4. Minimum Erase times are achieved under maximum NVM operating frequency f
NVMOP
.
— 26.7
3
ms
8 P Mass Erase Time t
mass
100
4
— 133
3
ms
9 D Blank Check Time Flash per block t
check
11
(5)
5. Minimum time, if first word in the array is not blank (512 byte sector size).
— 32778
(6)
6. Maximum time to complete check on an erased block (512 byte sector size)
(7)
t
cyc
7. Where t
cyc
is the system bus clock period.
9 D Blank Check Time Flash per block t
check
11
(8)
8. Minimum time, if first word in the array is not blank (1024 byte sector size)
— 65546
(9)
9. Maximum time to complete check on an erased block (1024 byte sector size).
7
t
cyc