Datasheet

Appendix A Electrical Characteristics
670 MC9S12C-Family / MC9S12GC-Family Freescale Semiconductor
Rev 01.24
A.5.1.1 Single Word Programming
The programming time for single word programming is dependant on the bus frequency as a well as on the
frequency f¨
NVMOP
and can be calculated according to the following formula.
A.5.1.2 Row Programming
Generally the time to program a consecutive word can be calculated as:
For the C16, GC16, C32 and GC32 device flash arrays, where up to 32 words in a row can be programmed
consecutively by keeping the command pipeline filled, the time to program a whole row is:
For the C64, GC64, C96, C128 and GC128 device flash arrays, where up to 64 words in a row can be
programmed consecutively by keeping the command pipeline filled, the time to program a whole row is:
Row programming is more than 2 times faster than single word programming.
A.5.1.3 Sector Erase
Erasing either a 512 byte or 1024 byte Flash sector takes:
The setup times can be ignored for this operation.
A.5.1.4 Mass Erase
Erasing a NVM block takes:
This is independent of sector size.
The setup times can be ignored for this operation.
t
swpgm
9
1
f
NVMOP
---------------------
⋅ 25
1
f
bus
----------
⋅+=
t
bwpgm
4
1
f
NVMOP
---------------------
⋅ 9
1
f
bus
----------
⋅+=
t
brpgm
t
swpgm
31 t
bwpgm
⋅+=
t
brpgm
t
swpgm
63 t
bwpgm
⋅+=
t
era
4000
1
f
NVMOP
---------------------
⋅≈
t
mass
20000
1
f
NVMOP
---------------------
⋅≈