Datasheet
Table Of Contents
- List of Sections
- Table of Contents
- General Description
- Central Processing Unit (CPU)
- Pinout and Signal Description
- System Configuration
- Registers
- Operating Modes
- Resource Mapping
- Bus Control and Input/Output
- Resets and Interrupts
- Voltage Regulator (VREG)
- Flash EEPROM 256K
- EEPROM 4K
- Port Integration Module
- Clocks and Reset Generator (CRG)
- Pulse Width Modulator (PWM)
- Enhanced Capture Timer (ECT)
- Serial Communications Interface (SCI)
- Serial Peripheral Interface (SPI)
- Inter-IC Bus (IIC)
- MSCAN
- Analog to Digital Converter
- Byte Data Link Controller Module
- Contents
- Overview
- Features
- Block Diagram
- Register Map
- Functional Description
- Register Descriptions
- External Pin Descriptions
- Reset Initialization/Basic Operation
- Transmitting A Message
- Receiving A Message
- Transmitting An In-Frame Response (IFR)
- Receiving An In-Frame Response (IFR)
- Special BDLC Operations
- Modes of Operation
- Interrupt Operation
- Low Power Options
- Background Debug Module (BDM)
- Breakpoint (BKP) Module
- Revision History
- Glossary
- Literature Updates

Flash EEPROM 256K
MC9S12DP256 — Revision 1.1
Flash EEPROM 256K
1. Writing to the flash address space before initializing FCLKDIV.
2. Writing to the flash address space in the range $8000–$BFFF
when PPAGE does not select a 16K block in the flash selected by
BKSEL[1:0].
3. Writing to the flash address space $4000–$7FFF or
$C000–$FFFF with BKSEL[1:0] not selecting Flash 0.
4. Writing a misaligned word or a byte to the flash address space.
5. Writing to the flash address space while CBEIF is not set.
6. Writing a second aligned word to the flash address space before
executing a program or erase command on the previously written
word.
7. Writing to any Flash register other than FCMD after writing an
aligned word to the flash address space.
8. Writing a second command to the FCMD register before executing
the previously written command.
9. Writing a MASS erase command to FCMD while any protection is
enabled. See FPROT register description.
10. Writing a SECTOR erase command to FCMD while protection is
enabled for that sector. See FPROT register description.
11. Writing to any Flash register other than FSTAT (to clear CBEIF)
after writing to the command register.
12. Reading from the flash block while a command sequence is being
entered or a program or erase command is being executed (i.e.
CCIF not set). Such a read access returns non valid data. Any
other block which is not being programmed can be read.
By writing a 0 to the CBEIF flag the command sequence can be aborted
after the aligned word write to the flash address space or after writing a
command to the FCMD register and before the command is launched.
The PVIOL flag will be set after the aligned write to the flash address
space if an attempt to program or erase a protected area of the flash
array is made. Such an operation will cause the command sequence to
immediately abort. The user must clear the PVIOL flag before being able
to commence another command sequence.
Freescale Semiconductor, I
Freescale Semiconductor, Inc.
For More Information On This Product,
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