Datasheet

Flash EEPROM 256K
Features
MC9S12DP256 — Revision 1.1
Flash EEPROM 256K
It is possible to perform ‘Read-While-Write’, i.e. program or erase one
flash block under control of software routines executing out of another
flash block.
Each block has hardware interlocks which protect data from accidental
corruption. One protected area is located at the upper address of the
flash module ($xxxx –$FFFF) normally used for boot code and another
area is located at the lowest address ($4000–$xxxx). Two additional
areas are located in the mapped memory pages $3A ($8000–$xxxx) and
$3B ($xxxx–$BFFF).
Security information preventing intrusive access to the MCU is stored
within the flash module.
Features
• 256K bytes of Flash made of four 64K byte blocks
– Single supply program and erase.
– Automated program and erase algorithm.
– Interrupt on command completion.
– All four flash blocks can be programmed and erased in parallel.
– Read-While-Write.
– Fast sector erase and word program operation.
– Flexible protection scheme against accidental program or
erase.
– Security feature.
Freescale Semiconductor, I
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
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