Datasheet

Appendix A Electrical Characteristics
MC9S08SH32 Series Data Sheet, Rev. 2
312 Freescale Semiconductor
A.13 Flash Specifications
This section provides details about program/erase times and program-erase endurance for the Flash
memory.
Program and erase operations do not require any special power sources other than the normal V
DD
supply.
For more detailed information about program/erase operations, see the Memory section.
Table A-16. Flash Characteristics
Num C Characteristic Symbol Min Typical Max Unit
1 — Supply voltage for program/erase V
prog/erase
2.7 5.5 V
2 — Supply voltage for read operation V
Read
2.7 5.5 V
3 — Internal FCLK frequency
1
1
The frequency of this clock is controlled by a software setting.
f
FCLK
150 200 kHz
4 — Internal FCLK period (1/f
FCLK
)t
Fcyc
5 6.67 μs
5 — Byte program time (random location)
2
2
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
t
prog
9t
Fcyc
6 — Byte program time (burst mode)
2
t
Burst
4t
Fcyc
7 — Page erase time
2
t
Page
4000 t
Fcyc
8 — Mass erase time
2
t
Mass
20,000 t
Fcyc
9C
Program/erase endurance
3
T
L
to T
H
= –40°C to +125°C
T = 25°C
3
Typical endurance for Flash is based upon the intrinsic bit cell performance. For additional information on how Freescale
defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory.
n
FLPE
10,000 —
100,000
—
—
cycles
10 C Data retention
4
4
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25°C using the Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer
to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
t
D_ret
15 100 — years
PRELIMINARY