Datasheet

Appendix A Electrical Characteristics
MC9S08QD4 Series MCU Data Sheet, Rev. 6
Freescale Semiconductor 189
A.10 Flash Specifications
This section provides details about program/erase times and program-erase endurance for the flash
memory.
Program and erase operations do not require any special power sources other than the normal V
DD
supply.
For more detailed information about program/erase operations, see the Memory section.
Zero-Scale Error
10 bit mode
E
ZS
0 ±1.5 ±3.1
LSB V
ADIN
= V
SSA
8 bit mode 0 ±0.5 ±0.7
Full-Scale Error
10 bit mode
E
FS
0 ±1.0 ±1.5
LSB V
ADIN
= V
DDA
8 bit mode 0 ±0.5 ±0.5
Quantization Error 10 bit mode E
Q
——±0.5 LSB
8 bit mode is
not truncated
1
Typical values assume V
DDAD
= 5.0 V, Temp = 25°C, f
ADCK
=1.0 MHz unless otherwise stated. Typical values are for reference
only and are not tested in production.
2
At 4 MHz, for maximum frequency, use proportionally lower source impedance.
Table A-11. Flash Characteristics
Characteristic Symbol Min Typical Max Unit
Supply voltage for program/erase
–40°C to 125°CV
prog/erase
2.7 5.5 V
Supply voltage for read operation V
Read
2.7 5.5 V
Internal FCLK frequency
1
1
The frequency of this clock is controlled by a software setting.
f
FCLK
150 200 kHz
Internal FCLK period (1/FCLK) t
Fcyc
56.67μs
Byte program time (random location)
(2)
t
prog
9t
Fcyc
Byte program time (burst mode)
(2)
t
Burst
4t
Fcyc
Page erase time
2
2
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
t
Page
4000 t
Fcyc
Mass erase time
(2)
t
Mass
20,000 t
Fcyc
Program/erase endurance
3
T
L
to T
H
= –40°C to + 125°C
T = 25°C
3
Typical endurance for flash was evaluated for this product family on the 9S12Dx64. For additional information on how
Freescale defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory.
10,000 —
100,000
—
—
cycles
Data retention
4
4
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25°C using the Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer
to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
t
D_ret
15 100 — years
Table A-10. ADC Characteristics (continued)
Characteristic Conditions Symb Min Typ
1
Max Unit Comment