Datasheet

LCD Specifications
MC9S08LL64 Series MCU Data Sheet, Rev. 7
Freescale Semiconductor 39
3.14 LCD Specifications
3.15 Flash Specifications
This section provides details about program/erase times and program-erase endurance for the Flash
memory.
Program and erase operations do not require any special power sources other than the normal V
DD
supply.
For more detailed information about program/erase operations, see the Memory section.
Table 20. LCD Electricals, 3-V Glass
No. C Characteristic Symbol Min Typ Max Unit
1 D LCD supply voltage V
LCD
.9 1.5 1.8 V
2 D LCD frame frequency f
Frame
28 30 58 Hz
3 D LCD charge pump capacitance C
LCD
—100100 nF
4 D LCD bypass capacitance C
BYLCD
—100100 nF
5 D LCD glass capacitance C
glass
— 2000 8000 pF
6
DV
IREG
HRefSel = 0 V
IREG
.89 1.00 1.15
V
7 HRefSel = 1 1.49 1.67 1.85
1
1
V
IREG
Max can not exceed V
DD
–.15 V
8DV
IREG
trim resolution Δ
RTRIM
1.5 — — % V
IREG
9
DV
IREG
ripple
HRefSel = 0 — — — .1
V
10 HRefSel = 1 — — — .15
11
D
V
LCD
buffered adder
2
2
VSUPPLY = 10, BYPASS = 0
I
Buff
—1 μA
Table 21. Flash Characteristics
No. C Characteristic Symbol Min Typical Max Unit
1D
Supply voltage for program/erase
–40 °C to 85 °C
V
prog/erase
1.8 — 3.6 V
2 D Supply voltage for read operation V
Read
1.8 — 3.6 V
3 D Internal FCLK frequency
1
f
FCLK
150 — 200 kHz
4 D Internal FCLK period (1/FCLK) t
Fcyc
5 — 6.67 μs
5 P Byte program time (random location)
2
t
prog
9t
Fcyc
6 P Byte program time (burst mode)
2
t
Burst
4t
Fcyc
7 P Page erase time
2
t
Page
4000 t
Fcyc
8 P Mass erase time
2
t
Mass
20,000 t
Fcyc
9 D Byte program current
3
R
IDDBP
—4—mA