Datasheet

Electrical Characteristics
MC9S08LL16 Series MCU Data Sheet, Rev. 7
Freescale Semiconductor 39
3.13 LCD Specifications
3.14 Flash Specifications
This section provides details about program/erase times and program-erase endurance for the flash
memory.
Program and erase operations do not require any special power sources other than the normal V
DD
supply.
For more detailed information about program/erase operations, see the Memory section.
Table 19. LCD Electricals, 3 V Glass
C Characteristic Symbol Min Typ Max Unit
D LCD Supply Voltage
V
LCD
0.9 1.5 1.8
V
D LCD Frame Frequency f
Frame
28 30 58 Hz
D LCD Charge Pump Capacitance C
LCD
100 100 nF
D LCD Bypass Capacitance C
BYLCD
100 100 nF
D LCD Glass Capacitance C
glass
2000 8000 pF
DV
IREG
HRefSel = 0 V
IREG
.89 1.00 1.15
V
HRefSel = 1 1.49 1.67 1.85
1
1
V
IREG
Max can not exceed V
DD
– 0.15 V
DV
IREG
TRIM Resolution Δ
RTRIM
1.5 %
V
IREG
DV
IREG
Ripple HRefSel = 0 0.1
V
HRefSel = 1 0.15
DV
LCD
Buffered Adder
2
2
VSUPPLY = 10, BYPASS = 0
I
Buff
1 μA