Datasheet

Appendix A Electrical Characteristics
MC9S08JM60 Series Data Sheet, Rev. 3
Freescale Semiconductor 369
Figure A-13. SPI Slave Timing (CPHA = 1)
A.13 Flash Specifications
This section provides details about program/erase times and program-erase endurance for the flash
memory.
Program and erase operations do not require any special power sources other than the normal V
DD
supply.
For more detailed information about program/erase operations.
Table A-16. Flash Characteristics
Num C Characteristic Symbol Min Typ
1
1
Typical values are based on characterization data at V
DD
= 5.0 V, 25°C unless otherwise stated.
Max Unit
1 Supply voltage for program/erase V
prog/erase
2.7 5.5 V
2 Supply voltage for read operation V
Read
2.7 5.5 V
3 Internal FCLK frequency
2
f
FCLK
150 200 kHz
4 Internal FCLK period (1/FCLK) t
Fcyc
56.67μs
5 Byte program time (random location)
(2)
t
prog
9t
Fcyc
6 Byte program time (burst mode)
(2)
t
Burst
4t
Fcyc
7 Page erase time
3
t
Page
4000 t
Fcyc
8 Mass erase time
(2)
t
Mass
20,000 t
Fcyc
9 C Program/erase endurance
4
T
L
to T
H
= –40°C to + 85°C
T = 25°C
10,000
—
—
100,000
—
—
cycles
10 Data retention
5
t
D_ret
15 100 — years
SCK
(INPUT)
SCK
(INPUT)
MOSI
(INPUT)
MISO
(OUTPUT)
MSB IN
BIT 6 . . . 1
LSB IN
MSB OUT
SLAVE LSB OUT
BIT 6 . . . 1
SEE
(CPOL = 0)
(CPOL = 1)
SS
(INPUT)
NOTE:
SLAVE
NOTE
1. Not defined but normally LSB of character just received
1
2
3
4
6
7
8
9
10 11
4
5
5