Datasheet
Table Of Contents
- Chapter 1 Device Overview
- Chapter 2 Pins and Connections
- Chapter 3 Modes of Operation
- Chapter 4 Memory
- 4.1 MC9S08DN60 Series Memory Map
- 4.2 Reset and Interrupt Vector Assignments
- 4.3 Register Addresses and Bit Assignments
- 4.4 RAM
- 4.5 Flash and EEPROM
- 4.5.1 Features
- 4.5.2 Program and Erase Times
- 4.5.3 Program and Erase Command Execution
- 4.5.4 Burst Program Execution
- 4.5.5 Sector Erase Abort
- 4.5.6 Access Errors
- 4.5.7 Block Protection
- 4.5.8 Vector Redirection
- 4.5.9 Security
- 4.5.10 EEPROM Mapping
- 4.5.11 Flash and EEPROM Registers and Control Bits
- 4.5.11.1 Flash and EEPROM Clock Divider Register (FCDIV)
- 4.5.11.2 Flash and EEPROM Options Register (FOPT and NVOPT)
- 4.5.11.3 Flash and EEPROM Configuration Register (FCNFG)
- 4.5.11.4 Flash and EEPROM Protection Register (FPROT and NVPROT)
- 4.5.11.5 Flash and EEPROM Status Register (FSTAT)
- 4.5.11.6 Flash and EEPROM Command Register (FCMD)
- Chapter 5 Resets, Interrupts, and General System Control
- 5.1 Introduction
- 5.2 Features
- 5.3 MCU Reset
- 5.4 Computer Operating Properly (COP) Watchdog
- 5.5 Interrupts
- 5.6 Low-Voltage Detect (LVD) System
- 5.7 MCLK Output
- 5.8 Reset, Interrupt, and System Control Registers and Control Bits
- 5.8.1 Interrupt Pin Request Status and Control Register (IRQSC)
- 5.8.2 System Reset Status Register (SRS)
- 5.8.3 System Background Debug Force Reset Register (SBDFR)
- 5.8.4 System Options Register 1 (SOPT1)
- 5.8.5 System Options Register 2 (SOPT2)
- 5.8.6 System Device Identification Register (SDIDH, SDIDL)
- 5.8.7 System Power Management Status and Control 1 Register (SPMSC1)
- 5.8.8 System Power Management Status and Control 2 Register (SPMSC2)
- Chapter 6 Parallel Input/Output Control
- 6.1 Port Data and Data Direction
- 6.2 Pull-up, Slew Rate, and Drive Strength
- 6.3 Pin Interrupts
- 6.4 Pin Behavior in Stop Modes
- 6.5 Parallel I/O and Pin Control Registers
- 6.5.1 Port A Registers
- 6.5.1.1 Port A Data Register (PTAD)
- 6.5.1.2 Port A Data Direction Register (PTADD)
- 6.5.1.3 Port A Pull Enable Register (PTAPE)
- 6.5.1.4 Port A Slew Rate Enable Register (PTASE)
- 6.5.1.5 Port A Drive Strength Selection Register (PTADS)
- 6.5.1.6 Port A Interrupt Status and Control Register (PTASC)
- 6.5.1.7 Port A Interrupt Pin Select Register (PTAPS)
- 6.5.1.8 Port A Interrupt Edge Select Register (PTAES)
- 6.5.2 Port B Registers
- 6.5.2.1 Port B Data Register (PTBD)
- 6.5.2.2 Port B Data Direction Register (PTBDD)
- 6.5.2.3 Port B Pull Enable Register (PTBPE)
- 6.5.2.4 Port B Slew Rate Enable Register (PTBSE)
- 6.5.2.5 Port B Drive Strength Selection Register (PTBDS)
- 6.5.2.6 Port B Interrupt Status and Control Register (PTBSC)
- 6.5.2.7 Port B Interrupt Pin Select Register (PTBPS)
- 6.5.2.8 Port B Interrupt Edge Select Register (PTBES)
- 6.5.3 Port C Registers
- 6.5.4 Port D Registers
- 6.5.4.1 Port D Data Register (PTDD)
- 6.5.4.2 Port D Data Direction Register (PTDDD)
- 6.5.4.3 Port D Pull Enable Register (PTDPE)
- 6.5.4.4 Port D Slew Rate Enable Register (PTDSE)
- 6.5.4.5 Port D Drive Strength Selection Register (PTDDS)
- 6.5.4.6 Port D Interrupt Status and Control Register (PTDSC)
- 6.5.4.7 Port D Interrupt Pin Select Register (PTDPS)
- 6.5.4.8 Port D Interrupt Edge Select Register (PTDES)
- 6.5.5 Port E Registers
- 6.5.6 Port F Registers
- 6.5.7 Port G Registers
- 6.5.1 Port A Registers
- Chapter 7 Central Processor Unit (S08CPUV3)
- 7.1 Introduction
- 7.2 Programmer’s Model and CPU Registers
- 7.3 Addressing Modes
- 7.4 Special Operations
- 7.5 HCS08 Instruction Set Summary
- Chapter 8 Multi-Purpose Clock Generator (S08MCGV1)
- 8.1 Introduction
- 8.2 External Signal Description
- 8.3 Register Definition
- 8.4 Functional Description
- 8.4.1 Operational Modes
- 8.4.1.1 FLL Engaged Internal (FEI)
- 8.4.1.2 FLL Engaged External (FEE)
- 8.4.1.3 FLL Bypassed Internal (FBI)
- 8.4.1.4 FLL Bypassed External (FBE)
- 8.4.1.5 PLL Engaged External (PEE)
- 8.4.1.6 PLL Bypassed External (PBE)
- 8.4.1.7 Bypassed Low Power Internal (BLPI)
- 8.4.1.8 Bypassed Low Power External (BLPE)
- 8.4.1.9 Stop
- 8.4.2 Mode Switching
- 8.4.3 Bus Frequency Divider
- 8.4.4 Low Power Bit Usage
- 8.4.5 Internal Reference Clock
- 8.4.6 External Reference Clock
- 8.4.7 Fixed Frequency Clock
- 8.4.1 Operational Modes
- 8.5 Initialization / Application Information
- 8.5.1 MCG Module Initialization Sequence
- 8.5.2 MCG Mode Switching
- 8.5.2.1 Example # 1: Moving from FEI to PEE Mode: External Crystal = 4 MHz, Bus Frequency = 8 MHz
- 8.5.2.2 Example # 2: Moving from PEE to BLPI Mode: External Crystal = 4 MHz, Bus Frequency =16 kHz
- 8.5.2.3 Example #3: Moving from BLPI to FEE Mode: External Crystal = 4 MHz, Bus Frequency = 16 MHz
- 8.5.2.4 Example # 4: Moving from FEI to PEE Mode: External Crystal = 8 MHz, Bus Frequency = 8 MHz
- 8.5.3 Calibrating the Internal Reference Clock (IRC)
- Chapter 9 Analog Comparator (S08ACMPV3)
- Chapter 10 Analog-to-Digital Converter (S08ADC12V1)
- 10.1 Introduction
- 10.2 External Signal Description
- 10.3 Register Definition
- 10.3.1 Status and Control Register 1 (ADCSC1)
- 10.3.2 Status and Control Register 2 (ADCSC2)
- 10.3.3 Data Result High Register (ADCRH)
- 10.3.4 Data Result Low Register (ADCRL)
- 10.3.5 Compare Value High Register (ADCCVH)
- 10.3.6 Compare Value Low Register (ADCCVL)
- 10.3.7 Configuration Register (ADCCFG)
- 10.3.8 Pin Control 1 Register (APCTL1)
- 10.3.9 Pin Control 2 Register (APCTL2)
- 10.3.10 Pin Control 3 Register (APCTL3)
- 10.4 Functional Description
- 10.5 Initialization Information
- 10.6 Application Information
- Chapter 11 Inter-Integrated Circuit (S08IICV2)
- Chapter 12 Serial Peripheral Interface (S08SPIV3)
- Chapter 13 Serial Communications Interface (S08SCIV4)
- Chapter 14 Real-Time Counter (S08RTCV1)
- Chapter 15 Timer Pulse-Width Modulator (S08TPMV3)
- Chapter 16 Development Support
- 16.1 Introduction
- 16.2 Background Debug Controller (BDC)
- 16.3 On-Chip Debug System (DBG)
- 16.4 Register Definition
- 16.4.1 BDC Registers and Control Bits
- 16.4.2 System Background Debug Force Reset Register (SBDFR)
- 16.4.3 DBG Registers and Control Bits
- 16.4.3.1 Debug Comparator A High Register (DBGCAH)
- 16.4.3.2 Debug Comparator A Low Register (DBGCAL)
- 16.4.3.3 Debug Comparator B High Register (DBGCBH)
- 16.4.3.4 Debug Comparator B Low Register (DBGCBL)
- 16.4.3.5 Debug FIFO High Register (DBGFH)
- 16.4.3.6 Debug FIFO Low Register (DBGFL)
- 16.4.3.7 Debug Control Register (DBGC)
- 16.4.3.8 Debug Trigger Register (DBGT)
- 16.4.3.9 Debug Status Register (DBGS)
- Appendix A Electrical Characteristics
- A.1 Introduction
- A.2 Parameter Classification
- A.3 Absolute Maximum Ratings
- A.4 Thermal Characteristics
- A.5 ESD Protection and Latch-Up Immunity
- A.6 DC Characteristics
- A.7 Supply Current Characteristics
- A.8 Analog Comparator (ACMP) Electricals
- A.9 ADC Characteristics
- A.10 External Oscillator (XOSC) Characteristics
- A.11 MCG Specifications
- A.12 AC Characteristics
- A.13 Flash and EEPROM
- A.14 EMC Performance
- Appendix B Timer Pulse-Width Modulator (TPMV2)
- Appendix C Ordering Information and Mechanical Drawings
Chapter 4 Memory
MC9S08DN60 Series Data Sheet, Rev 3
48 Freescale Semiconductor
• Burst programming capability
• Sector erase abort
4.5.2 Program and Erase Times
Before any program or erase command can be accepted, the Flash and EEPROM clock divider register
(FCDIV) must be written to set the internal clock for the Flash and EEPROM module to a frequency
(f
FCLK
) between 150 kHz and 200 kHz (see Section 4.5.11.1, “Flash and EEPROM Clock Divider
Register (FCDIV)”). This register can be written only once, so normally this write is performed during
reset initialization. The user must ensure that FACCERR is not set before writing to the FCDIV register.
One period of the resulting clock (1/f
FCLK
) is used by the command processor to time program and erase
pulses. An integer number of these timing pulses is used by the command processor to complete a program
or erase command.
Table 4-5 shows program and erase times. The bus clock frequency and FCDIV determine the frequency
of FCLK (f
FCLK
). The time for one cycle of FCLK is t
FCLK
= 1/f
FCLK
. The times are shown as a number
of cycles of FCLK and as an absolute time for the case where t
FCLK
=5μs. Program and erase times
shown include overhead for the command state machine and enabling and disabling of program and erase
voltages.
4.5.3 Program and Erase Command Execution
The FCDIV register must be initialized after any reset and any error flag is cleared before beginning
command execution. The command execution steps are:
1. Write a data value to an address in the Flash or EEPROM array. The address and data information
from this write is latched into the Flash and EEPROM interface. This write is a required first step
in any command sequence. For erase and blank check commands, the value of the data is not
important. For sector erase commands, the address can be any address in the sector of Flash or
EEPROM to be erased. For mass erase and blank check commands, the address can be any address
in the Flash or EEPROM memory. Flash and EEPROM erase independently of each other.
Table 4-5. Program and Erase Times
Parameter Cycles of FCLK Time if FCLK = 200 kHz
Byte program 9 45 μs
Burst program 4 20 μs
1
1
Excluding start/end overhead
Sector erase 4000 20 ms
Mass erase 20,000 100 ms
Sector erase abort 4 20 μs
1