Datasheet
Table Of Contents
- Chapter 1 Device Overview
- Chapter 2 Pins and Connections
- Chapter 3 Modes of Operation
- Chapter 4 Memory
- 4.1 MC9S08DN60 Series Memory Map
- 4.2 Reset and Interrupt Vector Assignments
- 4.3 Register Addresses and Bit Assignments
- 4.4 RAM
- 4.5 Flash and EEPROM
- 4.5.1 Features
- 4.5.2 Program and Erase Times
- 4.5.3 Program and Erase Command Execution
- 4.5.4 Burst Program Execution
- 4.5.5 Sector Erase Abort
- 4.5.6 Access Errors
- 4.5.7 Block Protection
- 4.5.8 Vector Redirection
- 4.5.9 Security
- 4.5.10 EEPROM Mapping
- 4.5.11 Flash and EEPROM Registers and Control Bits
- 4.5.11.1 Flash and EEPROM Clock Divider Register (FCDIV)
- 4.5.11.2 Flash and EEPROM Options Register (FOPT and NVOPT)
- 4.5.11.3 Flash and EEPROM Configuration Register (FCNFG)
- 4.5.11.4 Flash and EEPROM Protection Register (FPROT and NVPROT)
- 4.5.11.5 Flash and EEPROM Status Register (FSTAT)
- 4.5.11.6 Flash and EEPROM Command Register (FCMD)
- Chapter 5 Resets, Interrupts, and General System Control
- 5.1 Introduction
- 5.2 Features
- 5.3 MCU Reset
- 5.4 Computer Operating Properly (COP) Watchdog
- 5.5 Interrupts
- 5.6 Low-Voltage Detect (LVD) System
- 5.7 MCLK Output
- 5.8 Reset, Interrupt, and System Control Registers and Control Bits
- 5.8.1 Interrupt Pin Request Status and Control Register (IRQSC)
- 5.8.2 System Reset Status Register (SRS)
- 5.8.3 System Background Debug Force Reset Register (SBDFR)
- 5.8.4 System Options Register 1 (SOPT1)
- 5.8.5 System Options Register 2 (SOPT2)
- 5.8.6 System Device Identification Register (SDIDH, SDIDL)
- 5.8.7 System Power Management Status and Control 1 Register (SPMSC1)
- 5.8.8 System Power Management Status and Control 2 Register (SPMSC2)
- Chapter 6 Parallel Input/Output Control
- 6.1 Port Data and Data Direction
- 6.2 Pull-up, Slew Rate, and Drive Strength
- 6.3 Pin Interrupts
- 6.4 Pin Behavior in Stop Modes
- 6.5 Parallel I/O and Pin Control Registers
- 6.5.1 Port A Registers
- 6.5.1.1 Port A Data Register (PTAD)
- 6.5.1.2 Port A Data Direction Register (PTADD)
- 6.5.1.3 Port A Pull Enable Register (PTAPE)
- 6.5.1.4 Port A Slew Rate Enable Register (PTASE)
- 6.5.1.5 Port A Drive Strength Selection Register (PTADS)
- 6.5.1.6 Port A Interrupt Status and Control Register (PTASC)
- 6.5.1.7 Port A Interrupt Pin Select Register (PTAPS)
- 6.5.1.8 Port A Interrupt Edge Select Register (PTAES)
- 6.5.2 Port B Registers
- 6.5.2.1 Port B Data Register (PTBD)
- 6.5.2.2 Port B Data Direction Register (PTBDD)
- 6.5.2.3 Port B Pull Enable Register (PTBPE)
- 6.5.2.4 Port B Slew Rate Enable Register (PTBSE)
- 6.5.2.5 Port B Drive Strength Selection Register (PTBDS)
- 6.5.2.6 Port B Interrupt Status and Control Register (PTBSC)
- 6.5.2.7 Port B Interrupt Pin Select Register (PTBPS)
- 6.5.2.8 Port B Interrupt Edge Select Register (PTBES)
- 6.5.3 Port C Registers
- 6.5.4 Port D Registers
- 6.5.4.1 Port D Data Register (PTDD)
- 6.5.4.2 Port D Data Direction Register (PTDDD)
- 6.5.4.3 Port D Pull Enable Register (PTDPE)
- 6.5.4.4 Port D Slew Rate Enable Register (PTDSE)
- 6.5.4.5 Port D Drive Strength Selection Register (PTDDS)
- 6.5.4.6 Port D Interrupt Status and Control Register (PTDSC)
- 6.5.4.7 Port D Interrupt Pin Select Register (PTDPS)
- 6.5.4.8 Port D Interrupt Edge Select Register (PTDES)
- 6.5.5 Port E Registers
- 6.5.6 Port F Registers
- 6.5.7 Port G Registers
- 6.5.1 Port A Registers
- Chapter 7 Central Processor Unit (S08CPUV3)
- 7.1 Introduction
- 7.2 Programmer’s Model and CPU Registers
- 7.3 Addressing Modes
- 7.4 Special Operations
- 7.5 HCS08 Instruction Set Summary
- Chapter 8 Multi-Purpose Clock Generator (S08MCGV1)
- 8.1 Introduction
- 8.2 External Signal Description
- 8.3 Register Definition
- 8.4 Functional Description
- 8.4.1 Operational Modes
- 8.4.1.1 FLL Engaged Internal (FEI)
- 8.4.1.2 FLL Engaged External (FEE)
- 8.4.1.3 FLL Bypassed Internal (FBI)
- 8.4.1.4 FLL Bypassed External (FBE)
- 8.4.1.5 PLL Engaged External (PEE)
- 8.4.1.6 PLL Bypassed External (PBE)
- 8.4.1.7 Bypassed Low Power Internal (BLPI)
- 8.4.1.8 Bypassed Low Power External (BLPE)
- 8.4.1.9 Stop
- 8.4.2 Mode Switching
- 8.4.3 Bus Frequency Divider
- 8.4.4 Low Power Bit Usage
- 8.4.5 Internal Reference Clock
- 8.4.6 External Reference Clock
- 8.4.7 Fixed Frequency Clock
- 8.4.1 Operational Modes
- 8.5 Initialization / Application Information
- 8.5.1 MCG Module Initialization Sequence
- 8.5.2 MCG Mode Switching
- 8.5.2.1 Example # 1: Moving from FEI to PEE Mode: External Crystal = 4 MHz, Bus Frequency = 8 MHz
- 8.5.2.2 Example # 2: Moving from PEE to BLPI Mode: External Crystal = 4 MHz, Bus Frequency =16 kHz
- 8.5.2.3 Example #3: Moving from BLPI to FEE Mode: External Crystal = 4 MHz, Bus Frequency = 16 MHz
- 8.5.2.4 Example # 4: Moving from FEI to PEE Mode: External Crystal = 8 MHz, Bus Frequency = 8 MHz
- 8.5.3 Calibrating the Internal Reference Clock (IRC)
- Chapter 9 Analog Comparator (S08ACMPV3)
- Chapter 10 Analog-to-Digital Converter (S08ADC12V1)
- 10.1 Introduction
- 10.2 External Signal Description
- 10.3 Register Definition
- 10.3.1 Status and Control Register 1 (ADCSC1)
- 10.3.2 Status and Control Register 2 (ADCSC2)
- 10.3.3 Data Result High Register (ADCRH)
- 10.3.4 Data Result Low Register (ADCRL)
- 10.3.5 Compare Value High Register (ADCCVH)
- 10.3.6 Compare Value Low Register (ADCCVL)
- 10.3.7 Configuration Register (ADCCFG)
- 10.3.8 Pin Control 1 Register (APCTL1)
- 10.3.9 Pin Control 2 Register (APCTL2)
- 10.3.10 Pin Control 3 Register (APCTL3)
- 10.4 Functional Description
- 10.5 Initialization Information
- 10.6 Application Information
- Chapter 11 Inter-Integrated Circuit (S08IICV2)
- Chapter 12 Serial Peripheral Interface (S08SPIV3)
- Chapter 13 Serial Communications Interface (S08SCIV4)
- Chapter 14 Real-Time Counter (S08RTCV1)
- Chapter 15 Timer Pulse-Width Modulator (S08TPMV3)
- Chapter 16 Development Support
- 16.1 Introduction
- 16.2 Background Debug Controller (BDC)
- 16.3 On-Chip Debug System (DBG)
- 16.4 Register Definition
- 16.4.1 BDC Registers and Control Bits
- 16.4.2 System Background Debug Force Reset Register (SBDFR)
- 16.4.3 DBG Registers and Control Bits
- 16.4.3.1 Debug Comparator A High Register (DBGCAH)
- 16.4.3.2 Debug Comparator A Low Register (DBGCAL)
- 16.4.3.3 Debug Comparator B High Register (DBGCBH)
- 16.4.3.4 Debug Comparator B Low Register (DBGCBL)
- 16.4.3.5 Debug FIFO High Register (DBGFH)
- 16.4.3.6 Debug FIFO Low Register (DBGFL)
- 16.4.3.7 Debug Control Register (DBGC)
- 16.4.3.8 Debug Trigger Register (DBGT)
- 16.4.3.9 Debug Status Register (DBGS)
- Appendix A Electrical Characteristics
- A.1 Introduction
- A.2 Parameter Classification
- A.3 Absolute Maximum Ratings
- A.4 Thermal Characteristics
- A.5 ESD Protection and Latch-Up Immunity
- A.6 DC Characteristics
- A.7 Supply Current Characteristics
- A.8 Analog Comparator (ACMP) Electricals
- A.9 ADC Characteristics
- A.10 External Oscillator (XOSC) Characteristics
- A.11 MCG Specifications
- A.12 AC Characteristics
- A.13 Flash and EEPROM
- A.14 EMC Performance
- Appendix B Timer Pulse-Width Modulator (TPMV2)
- Appendix C Ordering Information and Mechanical Drawings
Appendix A Electrical Characteristics
MC9S08DN60 Series Data Sheet, Rev 3
Freescale Semiconductor 329
A.13 Flash and EEPROM
This section provides details about program/erase times and program-erase endurance for the Flash and
EEPROM memory.
Program and erase operations do not require any special power sources other than the normal V
DD
supply.
For more detailed information about program/erase operations, see Chapter 4, “Memory.”
Table A-16. Flash and EEPROM Characteristics
Num C Rating Symbol Min Typical Max Unit
1 — Supply voltage for program/erase
V
prog/erase
2.7 5.5 V
2—
Supply voltage for read operation
0 < f
Bus
< 8 MHz
0<f
Bus
< 20 MHz
V
Read
2.7 5.5 V
3—
Internal FCLK frequency
1
1
The frequency of this clock is controlled by a software setting.
f
FCLK
150 200 kHz
4 — Internal FCLK period (1/FCLK)
t
Fcyc
5 6.67 μs
5—
Byte program time (random location)
(2)
t
prog
9
t
Fcyc
6—
Byte program time (burst mode)
(2)
t
Burst
4
t
Fcyc
7—
Page erase time
2
2
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
t
Page
4000
t
Fcyc
8—
Mass erase time
(2)
t
Mass
20,000
t
Fcyc
9C
Flash Program/erase endurance
3
T
L
to T
H
= –40°C to + 125°C
T = 25°C
3
Typical endurance for Flash and EEPROM is based on the intrinsic bit cell performance. For additional information on how
Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for
Nonvolatile Memory.
n
FLPE
10,000
—
—
100,000
—
—
cycles
10 C
EEPROM Program/erase endurance
3
T
L
to T
H
= –40°C to + 0°C
T
L
to T
H
= 0°C to + 125°C
T = 25°C
n
EEPE
10,000
50,000
—
—
—
100,000
—
—
—
cycles
11 C
Data retention
4
4
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25°C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines typical data
retention, please refer to Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
t
D_ret
15 100 — years