Datasheet

Electrical Characteristics
MC9RS08KB12 Series MCU Data Sheet, Rev. 5
Freescale Semiconductor 9
During the device qualification ESD stresses were performed for the human body model (HBM) and the
charge device model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
Table 5. ESD and Latch-Up Test Conditions
Model Description Symbol Value Unit
Human
body
Series resistance R1 1500 Ω
Storage capacitance C 100 pF
Number of pulses per pin — 1 —
Latch-up
Minimum input voltage limit — –2.5 V
Maximum input voltage limit — 7.5 V