Datasheet

Electrical Characteristics
MC9RS08KB12 Series MCU Data Sheet, Rev. 5
Freescale Semiconductor 33
3.13 Flash Specifications
This section provides details about program/erase times and program-erase endurance for the flash
memory. For detailed information about program/erase operations, see the reference manual.
D Input Leakage
Error
10-bit mode E
IL
———LSB
2
Pad leakage
2
*
R
AS
8-bit mode ±0.1 ±1
1
Typical values assume V
DDAD
= 1.8 V, Temp = 25 °C, f
ADCK
= 1.0 MHz unless otherwise stated. Typical values are for reference
only and are not tested in production.
2
Based on input pad leakage current. Refer to pad electricals.
Table 17. Flash Characteristics
No. C Characteristic Symbol Min Typical
1
1
Typicals are measured at 25 °C.
Max Unit
1 D Supply voltage for program/erase V
DD
2.7 5.5 V
2 D Program/Erase voltage V
PP
11.8 12 12.2 V
3C
V
PP
current
Program
Mass erase
I
VPP_prog
I
VPP_erase
200
100
μA
μA
4D
Supply voltage for read operation
0 < f
Bus
< 10 MHz
V
Read
1.8 5.5 V
5 P Byte program time t
prog
20 40 μs
6 P Mass erase time t
me
500 ms
7 C Cumulative program HV time
2
2
t
hv
is the cumulative high voltage programming time to the same row before next erase. Same address can not be
programmed more than twice before next erase.
t
hv
——8ms
8C
Total cumulative HV time
(total of t
me
& t
hv
applied to device)
t
hv_total
2 hours
9 D HVEN to program setup time t
pgs
10 μs
10 D PGM/MASS to HVEN setup time t
nvs
5—μs
11 D HVEN hold time for PGM t
nvh
5—μs
12 D HVEN hold time for MASS t
nvh1
100 μs
13 D V
PP
to PGM/MASS setup time t
vps
20 ns
14 D HVEN to V
PP
hold time t
vph
20 ns
15 D V
PP
rise time
3
3
Fast V
PP
rise time may potentially trigger the ESD protection structure, which may result in over current flowing into the pad
and cause permanent damage to the pad. External filtering for the V
PP
power source is recommended. An example V
PP
filter is shown in Figure 35.
t
vrs
200 ns
16 D Recovery time t
rcv
1—μs
17 D
Program/erase endurance
T
L
to T
H
= –40 °C to 85 °C
1000 cycles
18 C Data retention t
D_ret
15 years
Table 16. 10-Bit ADC Characteristics (V
REFH
= V
DDAD
, V
REFL
= V
SSAD
, 1.8 V < V
DDAD
< 2.7 V)
C Characteristic Conditions Symb Min Typ
1
Max Unit Comment