Datasheet

Appendix A Electrical Characteristics
MC9RS08KA2 Series Data Sheet, Rev. 4
120 Freescale Semiconductor
Table A-9. FLASH Characteristics
Characteristic Symbol Min Typical
1
1
Typicals are measured at 25°C.
Max Unit
Supply voltage for program/erase V
DD
2.7 — 5.5 V
Program/Erase voltage V
PP
11.8 12 12.2 V
V
PP
current
Program
Mass erase
I
VPP_prog
I
VPP_erase
—
—
—
—
200
100
μA
μA
Supply voltage for read operation
0 < f
Bus
< 10 MHz V
Read
1.8 — 5.5 V
Byte program time t
prog
20 — 40 μs
Mass erase time t
me
500 — — ms
Cumulative program HV time
2
2
t
hv
is the cumulative high voltage programming time to the same row before next erase. Same address can not
be programmed more than twice before next erase.
t
hv
—— 8ms
Total cumulative HV time
(total of t
me
& t
hv
applied to device)
t
hv_total
— — 2 hours
HVEN to program setup time t
pgs
10 — — μs
PGM/MASS to HVEN setup time t
nvs
5——μs
HVEN hold time for PGM t
nvh
5——μs
HVEN hold time for MASS t
nvh1
100 — — μs
V
PP
to PGM/MASS setup time t
vps
20 — — ns
HVEN to V
PP
hold time t
vph
20 — — ns
V
PP
rise time
3
3
Fast V
PP
rise time may potentially trigger the ESD protection structure, which may result in over current flowing
into the pad and cause permanent damage to the pad. External filtering for the V
PP
power source is
recommended. An example VPP filter is shown in Figure A-3.
t
vrs
200 — — ns
Recovery time t
rcv
1——μs
Program/erase endurance
T
L
to T
H
= –40°C to + 85°C
—
1000 — — cycles
Data retention t
D_ret
15 100 — years