Datasheet
Table Of Contents
- List of Sections
- Table of Contents
- List of Figures
- List of Tables
- Section 1. General Description
- 1.1 Contents
- 1.2 Introduction
- 1.3 Features
- 1.4 MCU Block Diagram
- 1.5 Pin Assignments
- 1.6 Pin Functions
- 1.6.1 Power Supply Pins (Vdd and Vss)
- 1.6.2 Oscillator Pins (OSC1 and OSC2)
- 1.6.3 External Reset Pin (RST)
- 1.6.4 External Interrupt Pin (IRQ)
- 1.6.5 Analog Power Supply Pin (VDDA)
- 1.6.6 Analog Ground Pin (VSSA)
- 1.6.7 Analog Ground Pin (AVSS/VREFL)
- 1.6.8 ADC Voltage Reference Pin (VREFH)
- 1.6.9 Analog Supply Pin (VDDAREF)
- 1.6.10 External Filter Capacitor Pin (CGMXFC)
- 1.6.11 Port A Input/Output (I/O) Pins (PTA7-PTA0)
- 1.6.12 Port B I/O Pins (PTB7/ATD7-PTB0/ATD0)
- 1.6.13 Port C I/O Pins (PTC5-PTC0)
- 1.6.14 Port D I/O Pins (PTD7-PTD0)
- 1.6.15 Port E I/O Pins (PTE7/SPSCK-PTE0/TxD)
- 1.6.16 Port F I/O Pins (PTF7-PTF0/TACH2)
- 1.6.17 Port G I/O Pins (PTG2/KBD2-PTG0/KBD0)
- 1.6.18 Port H I/O Pins (PTH1/KBD4-PTH0/KBD3)
- 1.7 I/O Pin Summary
- 1.8 Signal Name Conventions
- 1.9 Clock Source Summary
- Section 2. Memory Map
- Section 3. Random-Access Memory (RAM)
- Section 4. FLASH Memory
- Section 5. EEPROM
- Section 6. Configuration Register (CONFIG)
- Section 7. Central Processor Unit (CPU)
- Section 8. System Integration Module (SIM)
- Section 9. Clock Generator Module (CGM)
- 9.1 Contents
- 9.2 Introduction
- 9.3 Features
- 9.4 Functional Description
- 9.5 I/O Signals
- 9.5.1 Crystal Amplifier Input Pin (OSC1)
- 9.5.2 Crystal Amplifier Output Pin (OSC2)
- 9.5.3 External Filter Capacitor Pin (CGMXFC)
- 9.5.4 PLL Analog Power Pin (VDDA)
- 9.5.5 Oscillator Enable Signal (SIMOSCEN)
- 9.5.6 Crystal Output Frequency Signal (CGMXCLK)
- 9.5.7 CGM Base Clock Output (CGMOUT)
- 9.5.8 CGM CPU Interrupt (CGMINT)
- 9.6 CGM Registers
- 9.7 Interrupts
- 9.8 Low-Power Modes
- 9.9 CGM During Break Interrupts
- 9.10 Acquisition/Lock Time Specifications
- Section 10. Monitor ROM (MON)
- Section 11. Timer Interface Module A (TIMA)
- Section 12. Timer Interface Module B (TIMB)
- Section 13. Programmable Interrupt Timer (PIT)
- Section 14. Analog-to-Digital Converter (ADC)
- Section 15. Serial Communications Interface Module (SCI)
- Section 16. Serial Peripheral Interface Module (SPI)
- 16.1 Contents
- 16.2 Introduction
- 16.3 Features
- 16.4 Pin Name Conventions and I/O Register Addresses
- 16.5 Functional Description
- 16.6 Transmission Formats
- 16.7 Queuing Transmission Data
- 16.8 Error Conditions
- 16.9 Interrupts
- 16.10 Resetting the SPI
- 16.11 Low-Power Modes
- 16.12 SPI During Break Interrupts
- 16.13 I/O Signals
- 16.14 I/O Registers
- Section 17. Input/Output (I/O) Ports
- Section 18. External Interrupt (IRQ)
- Section 19. Keyboard Interrupt Module (KBI)
- Section 20. Computer Operating Properly (COP)
- Section 21. Low-Voltage Inhibit (LVI)
- Section 22. Break Module (BRK)
- Section 23. Electrical Specifications
- 23.1 Contents
- 23.2 Introduction
- 23.3 Absolute Maximum Ratings
- 23.4 Functional Operating Range
- 23.5 Thermal Characteristics
- 23.6 5.0-V DC Electrical Characteristics
- 23.7 EEPROM and Memory Characteristics
- 23.8 5.0-V Control Timing
- 23.9 Timer Interface Module Characteristics
- 23.10 ADC Characteristics
- 23.11 SPI Characteristics
- 23.12 Clock Generation Module Characteristics
- 23.13 FLASH Memory Characteristics
- Section 24. Mechanical Specifications
- Section 25. Ordering Information
Electrical Specifications
MC68HC908AB32 — Rev. 1.1 Technical Data
Freescale Semiconductor Electrical Specifications
377
23.7 EEPROM and Memory Characteristics
Low-voltage inhibit reset/recover hysteresis – target
H
LVI
100 150 — mV
POR rearm voltage
(7)
V
POR
0—200mV
POR reset voltage
(8)
V
PORRST
0—800mV
POR rise time ramp rate
(9)
R
POR
0.02 — — V/ms
Notes:
1. V
DD
= 5.0 Vdc ± 10%, V
SS
= 0 Vdc, T
A
= T
L
to T
H
, unless otherwise noted
2. Typical values reflect average measurements at midpoint of voltage range, 25 °C only.
3. Run (operating) I
DD
measured using external square wave clock source (f
BUS
= 8.4 MHz). All inputs 0.2 V from rail. No dc
loads. Less than 100 pF on all outputs. C
L
= 20 pF on OSC2. All ports configured as inputs. OSC2 capacitance linearly
affects run I
DD
. Measured with all modules enabled.
4. Wait I
DD
measured using external square wave clock source (f
BUS
= 8.4 MHz). All inputs 0.2 V from rail. No dc loads. Less
than 100 pF on all outputs. C
L
= 20 pF on OSC2. All ports configured as inputs. OSC2 capacitance linearly affects wait
I
DD
. Measured with PLL and LVI enabled.
5. Stop I
DD
is measured with OSC1 = V
SS
.
6. Pullups are disabled. Port B leakage is specified in 23.10 ADC Characteristics.
7. Maximum is highest voltage that POR is guaranteed.
8. Maximum is highest voltage that POR is possible.
9. If minimum V
DD
is not reached before the internal POR reset is released, RST must be driven low externally until minimum
V
DD
is reached.
Characteristic Symbol Min Max Unit
RAM data retention voltage
V
RDR
0.7 — V
EEPROM programming time per byte
t
EEPGM
10 — ms
EEPROM erasing time per byte
t
EBYTE
10 — ms
EEPROM erasing time per block
t
EBLOCK
10 — ms
EEPROM erasing time per bulk
t
EBULK
10 — ms
EEPROM programming voltage discharge period
t
EEFPV
100 — µs
Number of programming operations to the same EEPROM
byte before erase
(1)
Notes:
1. Programming a byte more times than the specified maximum may affect the data integrity of that byte. The byte must
be erased before it can be programmed again.
——8—
EEPROM write/erase cycles at 10ms write time (85°C) — 10,000 — Cycles
EEPROM data retention after 10,000 write/erase cycles — 10 — Years
Characteristic
(1)
Symbol Min Typ
(2)
Max Unit
