Datasheet

FLASH Memory (FLASH)
MC68HC908LJ12 — Rev. 2.1 Technical Data
Freescale Semiconductor FLASH Memory (FLASH) 67
Figure 4-3. FLASH Programming Flowchart
Set HVEN bit
Write any data to any FLASH address
within the row address range desired
Wait for a time, t
nvs
Set PGM bit
Wait for a time, t
pgs
Write data to the FLASH address
to be programmed
Wait for a time, t
prog
Clear PGM bit
Wait for a time, t
nvh
Clear HVEN bit
Wait for a time, t
rcv
Completed
programming
this row?
Y
N
End of Programming
The time between each FLASH address change (step 6 to step 6), or
must not exceed the maximum programming
time, t
PROG
max.
the time between the last FLASH address programmed
to clearing PGM bit (step 6 to step 9)
NOTE:
1
2
3
4
5
6
7
9
10
11
12
Algorithm for programming
a row (64 bytes) of FLASH memory
This row program algorithm assumes the row/s
to be programmed are initially erased.