Datasheet

Electrical Specifications
Technical Data MC68HC908LJ12 — Rev. 2.1
406 Electrical Specifications Freescale Semiconductor
23.18 FLASH Memory Characteristics
Table 23-12. FLASH Memory Electrical Characteristics
Characteristic Symbol Min. Max. Unit
Data retention voltage V
RDR
1.3 — V
Number of rows per page 2 Rows
Number of bytes per page 128 Bytes
Read bus clock frequency
f
Read
(1)
Notes:
1. f
Read
is defined as the frequency range for which the FLASH memory can be read.
32k 8M Hz
Page erase time
t
Erase
(2)
2. If the page erase time is longer than t
Erase
(Min.), there is no erase-disturb, but it reduces the endurance of the FLASH
memory.
1—ms
Mass erase time
t
MErase
(3)
3. If the mass erase time is longer than t
MErase
(Min.), there is no erase-disturb, but is reduces the endurance of the FLASH
memory.
4—ms
PGM/ERASE to HVEN setup time
t
nvs
10 — µs
High-voltage hold time
t
nvh
5—µs
High-voltage hold time (mass erase)
t
nvhl
100 — µs
Program hold time
t
pgs
5— µs
Program time
t
Prog
30 40 µs
Address/data setup time
t
ads
—30 ns
Address/data hold time
t
adh
—30 ns
Recovery time
t
rcv
(4)
4. It is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by clearing
HVEN to logic 0.
1—µs
Cumulative HV period
t
hv
(5)
5. t
hv
is the cumulative high voltage programming time to the same row before next erase, and the same address can not be
programmed twice before next erase.
— 25ms
Row erase endurance
(6)
6. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least this many
erase/program cycles.
— 10k — Cycles
Row program endurance
(7)
7. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least this many
erase/program cycle.
— 10k — Cycles
Data retention time
(8)
8. The FLASH is guaranteed to retain data over the entire operating temperature range for at least the minimum time
specified.
—10—Years