Datasheet

Flash Memory
Technical Data MC68HC908GR8 — Rev 4.0
160 Flash Memory MOTOROLA
PGM — Program Control Bit
This read/write bit configures the memory for program operation.
PGM is interlocked with the ERASE bit such that both bits cannot be
equal to 1 or set to 1 at the same time.
1 = Program operation selected
0 = Program operation unselected
11.5 FLASH Page Erase Operation
Use this step-by-step procedure to erase a page (64 bytes) of FLASH
memory to read as logic 1:
1. Set the ERASE bit, and clear the MASS bit in the FLASH control
register.
2. Read the FLASH block protect register.
3. Write any data to any FLASH address within the page address
range desired.
4. Wait for a time, t
nvs
(min. 10µs)
5. Set the HVEN bit.
6. Wait for a time, t
Erase
(min. 1ms)
7. Clear the ERASE bit.
8. Wait for a time, t
nvh
(min. 5µs)
9. Clear the HVEN bit.
10. After a time, t
rcv
(typ. 1µs), the memory can be accessed again in
read mode.
NOTE: While these operations must be performed in the order shown, other
unrelated operations may occur between the steps.
Frees
cale Semiconductor,
I
Freescale Semiconductor, Inc.
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