Datasheet

MC56F825x/MC56F824x Digital Signal Controller, Rev. 3
Specifications
Freescale Semiconductor52
Junction temperature is a function of die size, on-chip power dissipation, package thermal
resistance, mounting site (board) temperature, ambient temperature, air flow, power
dissipation of other components on the board, and board thermal resistance.
See Section 8.1, “Thermal Design Considerations,” for more detail on thermal design
considerations.
7.5 Recommended Operating Conditions
This section contains information about recommended operating conditions.
Table 22. Recommended Operating Conditions (V
REFLx
= 0 V, V
SSA
= 0 V, V
SS
= 0 V)
Characteristic Symbol Notes Min Typ Max Unit
Supply voltage
V
DD,
V
DDA
33.33.6 V
ADC Reference Voltage High
V
REFHx
3.0 V
DDA
V
Voltage difference V
DD
to V
DDA
ΔV
DD
-0.1 0 0.1 V
Voltage difference V
SS
to V
SSA
ΔV
SS
-0.1 0 0.1 V
Device Clock Frequency
Using relaxation oscillator
Using external clock source
FSYSCLK
0.001
0
60
60
MHz
Input Voltage High (digital inputs)
V
IH
Pin Groups 1, 2 2.0 5.5 V
Input Voltage Low (digital inputs)
V
IL
Pin Groups 1, 2 -0.3 0.8 V
Oscillator Input Voltage High
XTAL driven by an external clock source
V
IHOSC
Pin Group 4 2.0 V
DD
+ 0.3 V
Oscillator Input Voltage Low
V
ILOSC
Pin Group 4 -0.3 0.8 V
DAC Output Load Resistance
R
LD
Pin Group 5
3K
Ω
DAC Output Load Capacitance
C
LD
Pin Group 5
400
pf
Output Source Current High at V
OH
min.)
1
When programmed for low drive strength
When programmed for high drive strength
I
OH
Pin Group 1
Pin Group 1
-4
-8
mA
Output Source Current Low (at V
OL
max.)
1
When programmed for low drive strength
When programmed for high drive strength
I
OL
Pin Groups 1, 2
Pin Groups 1, 2
4
8
mA
Ambient Operating Temperature
(Extended Industrial)
T
A
-40 105 °C
Flash Endurance
(Program Erase Cycles)
N
F
T
A
= -40°C
to
125°C
10,000 cycles
Flash Data Retention
T
R
T
J
<= 85°C
avg 15 years
Flash Data Retention with <100
Program/Erase Cycles
t
FLRET
T
J
<= 85°C
avg 20 years