Datasheet

General Characteristics
56F8037/56F8027 Data Sheet, Rev. 8
Freescale Semiconductor 143
temperature, ambient temperature, air flow, power dissipation of other components on the board, and board thermal resistance.
7. See Section 12.1 for more details on thermal design considerations.
Note: Pin groups are detailed following Table 10-1
Table 10-4 Recommended Operating Conditions
(V
REFL x
= 0V, V
SSA
= 0V, V
SS
= 0V)
Characteristic Symbol Notes Min Typ Max Unit
Supply voltage
V
DD,
V
DDA
33.33.6 V
ADC Reference Voltage High
V
REFHx
3.0 V
DDA
V
Voltage difference V
DD
to V
DDA
V
DD
-0.1 0 0.1 V
Voltage difference V
SS
to V
SSA
V
SS
-0.1 0 0.1 V
Device Clock Frequency
Using relaxation oscillator
Using external clock source
FSYSCLK
1
0
32
32
MHz
Input Voltage High (digital inputs)
V
IH
Pin Groups 1, 2 2.0 5.5 V
Input Voltage Low (digital inputs)
V
IL
Pin Groups 1, 2 -0.3 0.8 V
Oscillator Input Voltage High
XTAL driven by an external clock source
V
IHOSC
Pin Group 4 2.0 V
DDA
+ 0.3 V
Oscillator Input Voltage Low
V
ILOSC
Pin Group 4 -0.3 0.8 V
DAC Output Load Resistance
RLD 3K — ohms
DAC Output Load Capacitance
CLD — 400 pF
Output Source Current High at V
OH
min.)
1
When programmed for low drive strength
When programmed for high drive strength
1. Total chip source or sink current cannot exceed 75mA
I
OH
Pin Group 1
Pin Group 1
—
—
-4
-8
mA
Output Source Current Low (at V
OL
max.)
1
When programmed for low drive strength
When programmed for high drive strength
I
OL
Pin Groups 1, 2
Pin Groups 1, 2
—
—
4
8
mA
Ambient Operating Temperature
(Extended Industrial)
T
A
-40 105 °C
Flash Endurance
(Program Erase Cycles)
N
F
T
A
= -40°C to
125°C
10,000 — cycles
Flash Data Retention
T
R
T
J
<= 85°C avg 15 — years
Flash Data Retention with <100
Program/Erase Cycles
t
FLRET
T
J
<= 85°C avg 20 — — years