Datasheet

Analog Integrated Circuit Device Data
Freescale Semiconductor 9
33897
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 5. Dynamic Electrical Characteristics
Characteristics noted under conditions of -40 °C ≤ T
A
≤ 125 °C, unless otherwise stated. Voltages are relative to GND unless
otherwise noted. All positive currents are into the pin. All negative currents are out of the pin.
Characteristic Symbol Min Typ Max Unit
BUS
Normal Speed Rising Output Delay
200 Ω ≤ R
L
≤ 3332 Ω, 1.0 μs ≤ Load Time Constants ≤ 4.0 μs
Measured from TXD = V
IL
to V
BUS
as follows:
Max Time to V
BUSMOD
= 3.7 V, 6.0 V ≤ V
BATT
≤ 26.5 V
(10)
Min Time to V
BUSMOD
= 1.0 V, 6.0 V ≤ V
BATT
≤ 26.5 V
(10)
Max Time to V
BUSMOD
= 2.7 V, V
BATT
= 5.0 V
(10)
Min Time to V
BUSMOD
= 1.0 V, V
BATT
= 5.0 V
(10)
t
DLYNORMRO
2.0 – 6.3
μs
Normal Speed Falling Output Delay
200 Ω ≤ R
L
≤ 3332 Ω, 1.0 μs ≤ Load Time Constants ≤ 4.0 μs
Measured from TXD = V
IH
to V
BUS
as follows:
Max Time to V
BUSMOD
= 1.0 V, 6.0 V ≤ V
BATT
≤ 26.5 V
(10)
Min Time to V
BUSMOD
= 3.7 V, 6.0 V ≤ V
BATT
≤ 26.5 V
(10)
Max Time to V
BUSMOD
= 1.0 V, V
BATT
= 5.0 V
(10)
Min Time to V
BUSMOD
= 2.7 V, V
BATT
= 5.0 V
(10)
t
DLYNORMFO
1.8 – 8.5
μs
High Speed Rising Output Delay
75 Ω ≤ R
L
≤ 135 Ω, 0.0 μs ≤ Load Time Constants ≤ 1.5 μs,
8.0
V ≤ V
BATT
≤ 16 V
Measured from TXD = V
IL
to V
BUS
as follows:
Max Time to V
BUS
= 3.7 V
(11)
Min Time to V
BUS
= 1.0 V
(11)
t
DLYHSRO
0.1 – 1.7
μs
High Speed Falling Output Delay
75 Ω ≤ R
L
≤ 135 Ω, 0.0 μs ≤ Load Time Constants ≤ 1.5 μs,
8.0
V ≤ V
BATT
≤ 16 V
Measured from TXD = V
IH
to V
BUS
as follows:
Max Time to V
BUS
= 1.0 V
(11)
Min Time to V
BUS
= 3.7 V
(11)
t
DLYHSFO
0.04 – 3.0
μs
Notes
10. V
BUSMOD
is the voltage at the BUSMOD node in Figure 6, page 13.
11. V
BUS
is the voltage at the BUS pin in Figure 7, page 14.