Datasheet

Analog Integrated Circuit Device Data
10 Freescale Semiconductor
33897
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
BUS (CONTINUED)
High Voltage Rising Output Delay
200 Ω ≤ R
L
≤ 3332 Ω, 1.0 μs ≤ Load Time Constants ≤ 4.0 μs
Measured from TXD=V
IL
to V
BUS
as follows:
Max Time to V
BUSMOD
= 3.7 V, 6.0 V ≤ V
BATT
≤ 26.5 V
(12)
Min Time to V
BUSMOD
= 1.0 V, 6.0 V ≤ V
BATT
≤ 26.5 V
(12)
Max Time to V
BUSMOD
= 9.4 V, 12.0 V ≤ V
BATT
≤ 26.5 V
(12)
t
DLYHVRO
2.0
2.0
2.0
–
–
–
6.3
6.3
18
μs
High Voltage Falling Output Delay
200 Ω ≤ R
L
≤ 3332 Ω, 1.0 μs ≤ Load Time Constants ≤ 4.0 μs,
12.0
V ≤ V
BATT
≤ 26.5 V
Measured from TXD=V
IH
to V
BUS
as follows:
Max Time to V
BUSMOD
= 1.0 V
(12)
Min Time to V
BUSMOD
= 3.7 V
(12)
t
DLYHVFO
1.8
1.8
–
–
14
14
μs
RECEIVER RXD
Receive Delay Time (5.0 V ≤ V
BATT
≤ 26.5 V)
Awake
t
RDLY
0.2 – 1.0
μs
Receive Delay Time (BUS Rising to RXD Falling, 5.0 V ≤ V
BATT
≤ 26.5 V)
Sleep
t
RDLYSL
10 – 70
μs
CNTL
CNTL Falling Delay Time (5.0 V ≤ V
BATT
≤ 26.5 V)
t
CNTLFDLY
300 – 1000 ms
Notes
12. V
BUSMOD
is the voltage at the BUSMOD node in Figure 6, page 13.
Table 5. Dynamic Electrical Characteristics (continued)
Characteristics noted under conditions of -40 °C ≤ T
A
≤ 125 °C, unless otherwise stated. Voltages are relative to GND unless
otherwise noted. All positive currents are into the pin. All negative currents are out of the pin.
Characteristic Symbol Min Typ Max Unit