Datasheet

Analog Integrated Circuit Device Data
8 Freescale Semiconductor
33660
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 4. Dynamic Electrical Characteristics
Characteristics noted under conditions of 4.75 V  V
DD
5.25 V, 8.0 V  V
BB
 18 V, -40 C  T
C
 125 C, unless otherwise
noted.
Characteristic Symbol Min Typ Max Unit
Fall Time
(17)
R
ISO
= 510  to V
BB
, C
ISO
= 10 nF to Ground
t
FALL(ISO)
– – 2.0
µs
ISO Propagation Delay
(18)
High to Low: R
ISO
= 510 , C
ISO
= 500 pF
(19)
Low to High: R
ISO
= 510 , C
ISO
= 500 pF
(20)
t
PD(ISO)
–
–
–
–
2.0
2.0
µs
Notes
17. Time required ISO voltage to transition from 0.8 V
BB
to 0.2 V
BB
.
18. Changes in the value of C
ISO
affect the rise and fall time but have minimal effect on Propagation Delay.
19. Step T
X
voltage from 0.8 V
DD
to 0.2 V
DD
. Time measured from V
IH(Tx)
until V
ISO
reaches 0.3 V
BB
.
20. Step T
X
voltage from 0.2 V
DD
to 0.8 V
DD
. Time measured from V
IL(Tx)
until V
ISO
reaches 0.7 V
BB
.