Datasheet
Analog Integrated Circuit Device Data
6 Freescale Semiconductor
33660
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 4. Static Electrical Characteristics
Characteristics noted under conditions of 4.75 V V
DD
5.25 V, 8.0 V V
BB
18 V, -40 C T
C
125 C, unless otherwise
noted.
Characteristic Symbol Min Typ Max Unit
POWER AND CONTROL
V
DD
Sleep State Current
T
x
= 0.8 V
DD
, CEN = 0.3 V
DD
I
DD(SS)
– –
0.1
mA
V
DD
Quiescent Operating Current
T
x
= 0.2 V
DD
, CEN = 0.7 V
DD
I
DD(Q)
– –
1.0
mA
V
BB
Sleep State Current
V
BB
= 16 V, T
x
= 0.8 V
DD
, CEN = 0.3 V
DD
I
BB(SS)
– –
50
µA
V
BB
Quiescent Operating Current
T
X
= 0.2 V
DD
, CEN = 0.7 V
DD
I
BB(Q)
– –
1.0
mA
Chip Enable
Input High Voltage Threshold
(10)
Input Low Voltage Threshold
(11)
V
IH(CEN)
V
IL(CEN)
0.7 V
DD
–
–
–
–
0.3 V
DD
V
Chip Enable Pull-down Current
(12)
I
PD(CEN)
2.0
–
40 µA
T
X
Input Low Voltage Threshold
R
ISO
= 510
(13)
V
IL(TX)
– –
0.3 x V
DD
V
T
X
Input High Voltage Threshold
R
ISO
= 510
(14)
V
IH(TX)
0.7 x V
DD
– –
V
T
X
Pull-up Current
(15)
I
PU(TX)
-40
–
-2.0 µA
R
X
Output Low Voltage Threshold
R
ISO
= 510 , T
X
= 0.2 V
DD
, R
x
Sinking 1.0 mA
V
OL(RX)
– –
0.2 V
DD
V
R
X
Output High Voltage Threshold
R
ISO
= 510 , T
X
= 0.8 V
DD
, R
X
Sourcing 250 µA
V
OH(RX)
0.8 V
DD
– –
V
Thermal Shutdown
(16)
T
LIM
150 170
–
C
Notes
10. When I
BB
transitions to >100 µA.
11. When I
BB
transitions to <100 µA.
12. Enable pin has an internal current pull-down. Pull-down current is measured with CEN pin at 0.3 V
DD
.
13. Measured by ramping T
X
down from 0.8 V
DD
and noting T
X
value at which ISO falls below 0.2 V
BB
.
14. Measured by ramping T
X
up from 0.2 V
DD
and noting the value at which ISO rises above 0.9 V
BB
.
15. T
x
pin has internal current pull-up. Pull-up current is measured with T
X
pin at 0.7 V
DD
.
16. Thermal Shutdown performance (T
LIM
) is guaranteed by design, but not production tested.