Datasheet

LPC408X_7X All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 3.1 — 1 September 2014 90 of 138
NXP Semiconductors
LPC408x/7x
32-bit ARM Cortex-M4 microcontroller
11. Dynamic characteristics
11.1 Flash memory
[1] Number of program/erase cycles.
[2] Programming times are given for writing 256 bytes from RAM to the flash. Data must be written to the flash
in blocks of 256 bytes.
[1] EEPROM clock frequency = 375 kHz. Programming/erase times increase with decreasing EEPROM clock
frequency.
11.2 External memory interface
Table 13. Flash characteristics
T
amb
=  40  C to +85  C, unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
N
endu
endurance
[1]
10000 100000 - cycles
t
ret
retention time powered 10 - - years
unpowered 20 - - years
t
er
erase time sector or multiple
consecutive sectors
95 100 105 ms
t
prog
programming
time
[2]
0.95 1 1.05 ms
Table 14. EEPROM characteristics
T
amb
=  40  Cto+85  C; V
DD(REG)(3V3)
= 2.7 V to 3.6 V.
Symbol Parameter Conditions Min Typ Max Unit
f
clk
clock frequency 200 375 400 kHz
N
endu
endurance 100000 500000 - cycles
t
ret
retention time powered 10 - - years
unpowered 10 - - years
t
er
erase time 64 bytes
[1]
-1.8-ms
t
prog
programming
time
64 bytes
[1]
-1.1-ms
Table 15. Dynamic characteristics: Static external memory interface
C
L
=30pF, T
amb
=  40  C to 85  C, V
DD(3V3)
= 3.0 V to 3.6 V. Values guaranteed by design.
Symbol Parameter
[1]
Conditions
[1]
Min Typ Max Unit
Read cycle parameters
[2]
t
CSLAV
CS LOW to address
valid time
RD
1
3.3 4.3 6.1 ns
t
CSLOEL
CS LOW to OE
LOW time
RD
2
[3]
2.4 + T
cy(clk)

WAITOEN
3.1 + T
cy(clk)

WAITOEN
4.2 + T
cy(clk)

WAITOEN
ns
t
CSLBLSL
CS LOW to BLS
LOW time
RD
3
; PB = 1
[3]
2.7 3.5 4.9 ns
t
OELOEH
OE LOW to OE
HIGH time
RD
4
[3]
(WAITRD 
WAITOEN + 1) 
T
cy(clk)
 2.2
(WAITRD 
WAITOEN + 1) 
T
cy(clk)
 2.8
(WAITRD 
WAITOEN + 1) 
T
cy(clk)
 3.8
ns