Datasheet

LPC2364_65_66_67_68 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 7.1 — 16 October 2013 50 of 69
NXP Semiconductors
LPC2364/65/66/67/68
Single-chip 16-bit/32-bit microcontrollers
11.4 Flash memory
[1] Number of program/erase cycles.
[2] Programming times are given for writing 256 bytes from RAM to the flash. Data must be written to the flash in blocks of 256 bytes.
Table 13. Dynamic characteristics of flash
T
amb
=  40  C to +85  C for standard devices,  40  C to +125  C for LPC2364HBD only, unless otherwise specified;
V
DD(3V3)
= 3.0 V to 3.6 V; all voltages are measured with respect to ground.
Symbol Parameter Conditions Min Typ Max Unit
N
endu
endurance
[1]
10000 100000 - cycles
t
ret
retention time powered; 100 cycles 10 - - years
unpowered;  100 cycles 20 - - years
t
er
erase time sector or multiple
consecutive sectors
95 100 105 ms
t
prog
programming time
[2]
0.95 1 1.05 ms