Datasheet
Table Of Contents
- 1. General description
- 2. Features and benefits
- 3. Applications
- 4. Ordering information
- 5. Block diagram
- 6. Pinning information
- 7. Functional description
- 7.1 Architectural overview
- 7.2 On-chip flash programming memory
- 7.3 On-chip SRAM
- 7.4 Memory map
- 7.5 Interrupt controller
- 7.6 Pin connect block
- 7.7 General purpose DMA controller
- 7.8 Fast general purpose parallel I/O
- 7.9 Ethernet (LPC2362 only)
- 7.10 USB interface
- 7.11 CAN controller and acceptance filters
- 7.12 10-bit ADC
- 7.13 10-bit DAC
- 7.14 UARTs
- 7.15 SPI serial I/O controller
- 7.16 SSP serial I/O controller
- 7.17 I2C-bus serial I/O controllers
- 7.18 I2S-bus serial I/O controllers
- 7.19 General purpose 32-bit timers/external event counters
- 7.20 Pulse width modulator
- 7.21 Watchdog timer
- 7.22 RTC and battery RAM
- 7.23 Clocking and power control
- 7.24 System control
- 7.25 Emulation and debugging
- 8. Limiting values
- 9. Thermal characteristics
- 10. Static characteristics
- 11. Dynamic characteristics
- 12. ADC electrical characteristics
- 13. DAC electrical characteristics
- 14. Application information
- 15. Package outline
- 16. Abbreviations
- 17. Revision history
- 18. Legal information
- 19. Contact information
- 20. Contents
LPC2361_62 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 5.1 — 15 October 2013 35 of 65
NXP Semiconductors
LPC2361/62
Single-chip 16-bit/32-bit MCU
9. Thermal characteristics
The average chip junction temperature, T
j
(C), can be calculated using the following
equation:
(1)
• T
amb
= ambient temperature (C),
• R
th(j-a)
= the package junction-to-ambient thermal resistance (C/W)
• P
D
= sum of internal and I/O power dissipation
The internal power dissipation is the product of I
DD
and V
DD
. The I/O power dissipation of
the I/O pins is often small and many times can be negligible. However it can be significant
in some applications.
T
j
T
amb
P
D
R
th j a–
+=
Table 5. Thermal characteristics
V
DD
= 3.0 V to 3.6 V; T
amb
=
40
C to +85
C unless otherwise specified;
Symbol Parameter Conditions Min Typ Max Unit
T
j(max)
maximum junction
temperature
--125 C
Table 6. Thermal resistance value (C/W): ±15 %
V
DD
= 3.0 V to 3.6 V; T
amb
=
40
C to +85
C unless otherwise specified.
LQFP100
ja
JEDEC (4.5 in 4 in)
0 m/s 37.3
1 m/s 32.2
2.5 m/s 29.5
Single-layer (4.5 in 3 in)
0 m/s 54.4
1 m/s 42.9
2.5 m/s 38.8
jc 6.7
jb 12
