Datasheet

LPC2101_02_03_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 2 June 2009 27 of 37
NXP Semiconductors
LPC2101/02/03
Single-chip 16-bit/32-bit microcontrollers
8.1 Power consumption in Deep power-down mode
Test conditions: Deep power-down mode entered; RTC off; SRAM off;
V
i(VBAT)
= V
DD(3V3)
= V
DDA
= 3.3 V.
Fig 6. Core supply current I
DD(CORE)
measured at different temperatures and supply
voltages
Test conditions: Deep power-down mode entered; V
i(BAT)
= 3.3 V; V
DD(1V8)
= 1.8 V;
V
DD(3V3)
=V
DDA
= 3.3 V.
Fig 7. Battery supply current I
BAT
measured at different temperatures and conditions
002aae680
Temperature (°C)
−40 853510 60−15
0.75
1.25
1
1.5
I
DD(CORE)
(µA)
0.5
1.7 V
1.65 V
V
DD(1V8)
=1.8 V
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Temperature (°C)
−40 853510 60−15
7.5
12.5
10
15
I
BAT
(µA)
5
RTC off; SRAM on
RTC off; SRAM off
RTC on; SRAM on
RTC on; SRAM off